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2SA1587

Toshiba

2SA1587 by Toshiba

The Toshiba 2SA1587 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 200, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and max operating temperature of 125°C. Features Gull Wing terminals in a rectangular shape for surface mount assembly.

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Overview

Enhance your electronic projects with the 2SA1587 by Toshiba, a high-quality Small Signal Bipolar Junction Transistor designed for amplification applications. Manufactured by Toshiba, renowned for their reliable and innovative technology, this PNP transistor offers excellent performance and durability. With a low VCEsat of 0.3V and a DC current gain of 200, this transistor ensures efficient power dissipation and enhanced signal amplification. Whether you're a hobbyist or a professional, the 2SA1587 is the perfect choice for improving the functionality and reliability of your electronic designs. Upgrade to Toshiba's 2SA1587 and experience superior quality and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, ensuring it is well protected and easy to handle.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by using a single transistor in the configuration.

Transistor Application: AMPLIFIER

Optimized for use in amplifier circuits, providing reliable and efficient amplification of signals.

Surface Mount: YES

Facilitates ease of installation and reduces the need for additional mounting hardware.

Maximum VCEsat: 0.3 V

Low VCEsat value helps minimize power dissipation and improve overall efficiency of the transistor.

Package Shape: RECTANGULAR

Compact rectangular shape allows for space-efficient placement on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits.

Maximum Power Dissipation (Abs): 0.1 W

Low power dissipation ensures the transistor operates efficiently and reliably.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for high-density mounting.

Maximum Power Dissipation Ambient: 0.1 W

Can safely dissipate heat in various ambient conditions, ensuring reliable performance in different environments.

Minimum DC Current Gain (hFE): 200

High DC current gain allows for effective signal amplification and increased circuit performance.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the transistor suitable for various temperature conditions.

Maximum Collector-Emitter Voltage: 120 V

Supports high collector-emitter voltage levels, expanding the range of applications the transistor can be used in.

Transistor Element Material: SILICON

Silicon material provides reliable performance and durability for the transistor.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many common applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit design and integration.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency operation in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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