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2SA1774T1G

Onsemi

2SA1774T1G by Onsemi

2SA1774T1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and max current of 0.1A. With a min DC current gain of 120, it's ideal for amplifier applications. This surface-mount transistor has a package style of small outline and operates up to 150°C.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 18,607 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.043

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-

18,607

$0.180

$0.067

$0.043

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Mouser Electronics

USA . 7,309 parts In-Stock

1+ parts

$0.220

100+ parts

$0.076

1k+ parts

$0.048

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$0.042

7,309

$0.220

$0.076

$0.048

$0.042

Newark

USA . 63,750 parts In-Stock

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63,750

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Rochester

USA . 50,690 parts In-Stock

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$0.022

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$0.018

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$0.017

50,690

-

$0.022

$0.018

$0.017

Verical

USA . 48,590 parts In-Stock

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48,590

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Chip1Stop

Japan . 42,000 parts In-Stock

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$0.021

42,000

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$0.021

Arrow

USA . 30,000 parts In-Stock

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$0.016

30,000

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$0.016

Future Electronics

Canada . 30,000 parts In-Stock

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$0.018

30,000

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$0.018

EBV Elektronik

Germany . 30,000 parts In-Stock

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30,000

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Distributors (In-Stock)

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Digiode

USA . 1,870 parts In-Stock

1+ parts

$0.024

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1,870

$0.024

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Nova Conductors

Japan . 900 parts In-Stock

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$0.042

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900

$0.042

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TME

Poland . 342 parts In-Stock

1+ parts

$0.090

100+ parts

$0.037

1k+ parts

$0.023

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$0.022

342

$0.090

$0.037

$0.023

$0.022

Flip Electronics

USA . 200,000 parts In-Stock

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IBS Electronics

USA . 156,000 parts In-Stock

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$0.035

156,000

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$0.035

NAC Semi

USA . 108,000 parts In-Stock

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Vyrian

USA . 45,699 parts In-Stock

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45,699

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Chip Stock

USA . 26,000 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1,000 parts In-Stock

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1,000

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VNN

France . 185 parts In-Stock

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185

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Cyclops Electronics Ltd

UK . 50 parts In-Stock

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50

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Prism Electronics

USA . 42 parts In-Stock

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42

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Semicontronic

India . 43,906 parts In-Stock

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$0.015

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$0.015

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$0.015

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43,906

$0.015

$0.015

$0.015

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Ampacity Inc.

Singapore . 43,660 parts In-Stock

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$0.015

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43,660

$0.015

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Corohmni

South Africa . 119 parts In-Stock

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$0.018

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119

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Corphita

USA . 2,460 parts In-Stock

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$0.022

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Argo Parts USA

USA . 4,796 parts In-Stock

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$0.042

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$0.040

4,796

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$0.040

Netroflash

USA . 100 parts In-Stock

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$0.042

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100

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Modulus Dynamics

Lithuania . 16,538 parts In-Stock

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$0.042

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16,538

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Aztec Data Supply Inc.

USA . 4,870 parts In-Stock

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$0.734

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$0.734

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Perfect Parts

USA . 114,281 parts In-Stock

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Continental Prestige Electronics

USA . 50,690 parts In-Stock

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Metaverse IC Inc.

Canada . 24,000 parts In-Stock

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Eastek

USA . 18,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,308 parts In-Stock

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SupplyDigital Components

Austria . 5,994 parts In-Stock

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Problanco Electronics

Mexico . 5,893 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Lixinc

USA . 497 parts In-Stock

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497

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TANS Electronics

Latvia . 479 parts In-Stock

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479

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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344

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Kulean Microsystems

USA . 221 parts In-Stock

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Overview

Unleash the power of high-quality amplification with the 2SA1774T1G from Onsemi! This PNP transistor offers unparalleled performance and reliability for your amplifier applications. Manufactured by Onsemi, a trusted name in the industry, this small signal bipolar junction transistor is designed for maximum power dissipation and optimal DC current gain. With its surface mount capability and compact package style, it's the perfect choice for your next project. Elevate your designs with the 2SA1774T1G and experience the difference quality makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as certain types of amplifiers.

Configuration: SINGLE

Simplified design and installation due to single configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Surface Mount: YES

Easily mountable on PCBs, facilitating assembly process.

Package Shape: RECTANGULAR

Efficient use of space on PCBs, especially in compact designs.

Terminal Form: GULL WING

Provides secure and reliable connection to PCB, reducing chances of disconnection.

No. of Terminals: 3

Simplified connection structure, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power handling capabilities for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package size suitable for small-scale applications.

Minimum DC Current Gain (hFE): 120

Ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltage levels, expanding application range.

Transistor Element Material: SILICON

Provides high reliability and performance compared to other materials.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications.

Terminal Finish: MATTE TIN

Facilitates soldering process and ensures reliable connection.

Terminal Position: DUAL

Provides flexibility in circuit layout and connectivity options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during PCB assembly process.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly.

Nominal Transition Frequency (fT): 140 MHz

Suitable for high frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1774T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1774T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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