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2SA1611M7-T1-A

Renesas Electronics

2SA1611M7-T1-A by Renesas Electronics

2SA1611M7-T1-A by Renesas Electronics is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 300. It is designed for amplifier applications, featuring a small outline package style and Gull Wing terminal form for surface mount assembly. With a max operating temperature of 150°C, it offers high performance in compact electronic designs.

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Overview

Enhance the performance of your amplifiers with the high-quality 2SA1611M7-T1-A by Renesas Electronics. Renowned for their superior manufacturing standards, Renesas Electronics delivers top-notch Small Signal Bipolar Junction Transistors that are ideal for a variety of applications. With a PNP configuration and a maximum collector-emitter voltage of 50V, this transistor offers customers unparalleled value and reliability. Upgrade your amplifier designs today with the 2SA1611M7-T1-A and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable packaging option for easy handling and protection of the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing versatility in circuit design.

Configuration: SINGLE

Simplified circuit design as only one transistor is needed for the application.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in amplification applications.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, making it suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Space-efficient shape that allows for compact layout designs in circuit boards.

Terminal Form: GULL WING

Facilitates easy soldering during assembly, ensuring secure electrical connections.

Maximum Power Dissipation (Abs): 0.15 W

Can dissipate up to 0.15W of power without overheating, suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Compact package style that saves space on the circuit board, ideal for applications with space constraints.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification and signal processing in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 50 V

Supports high collector-emitter voltages, making it suitable for a wide range of circuit designs.

Transistor Element Material: SILICON

Silicon material provides reliable performance and stability for the transistor.

Maximum Collector Current (IC): 0.1 A

Can handle collector currents up to 0.1A, suitable for low to medium current applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connection options.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for fast switching and high-frequency operation in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1611M7-T1-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1611M7-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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