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2SA1587-BL,LF(B

Toshiba

2SA1587-BL,LF(B by Toshiba

2SA1587-BL,LF(B by Toshiba is a PNP BJT transistor with max VCEsat of 0.3V and hFE of 350. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 125°C. Its GULL WING terminals make it suitable for surface mount designs.

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Overview

Upgrade your electronic projects with the 2SA1587-BL,LF(B by Toshiba! With a reputation for top-notch quality and reliability, Toshiba brings you a Small Signal Bipolar Junction Transistor perfect for amplifier applications. This PNP transistor offers a low VCEsat of 0.3V, maximizing efficiency and performance. Its compact design and Gull Wing terminal form make it ideal for surface mount installations. Trust Toshiba to deliver exceptional value and seamless integration in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor in various environments.

Polarity or Channel Type: PNP

Allows for easy integration and compatibility with PNP circuit designs.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring reliable performance in amplification circuits.

Surface Mount: YES

Enables easy and convenient surface-mount installation, saving space and improving assembly efficiency.

Maximum VCEsat: 0.3 V

Low VCEsat reduces power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Standard rectangular shape for easy mounting and integration in various electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections for the transistor.

No. of Terminals: 3

Simplified 3-terminal configuration for straightforward circuit connections.

Maximum Power Dissipation (Abs): 0.1 W

Low power dissipation ensures efficient operation and prevents overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style for space-saving designs.

Maximum Power Dissipation Ambient: 0.1 W

Efficient power dissipation even in varying ambient conditions.

Minimum DC Current Gain (hFE): 350

High DC current gain provides consistent and reliable amplification.

Maximum Operating Temperature: 125 °C

Wide operating temperature range for versatile use in different temperature environments.

Maximum Collector-Emitter Voltage: 120 V

High collector-emitter voltage rating for robust and safe operation in various voltages.

Transistor Element Material: SILICON

Silicon material ensures stable and reliable performance in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current capacity for various amplification applications.

Terminal Position: DUAL

Dual terminal position for flexibility in circuit connections and applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency for fast and efficient signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-BL,LF(B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-BL,LF(B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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