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2SA1566E

Renesas Technology

2SA1566E by Renesas Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; No. of Terminals: 3;

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Suppliers In-Stock

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In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 157 parts In-Stock

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$1.660

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157

$1.660

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Northwest PG Solutions

USA . 1,092 parts In-Stock

1+ parts

$1.826

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10k+ parts

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1,092

$1.826

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1566E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

400

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SA1566E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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