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2SA1587-BL,LF(T

Toshiba

2SA1587-BL,LF(T by Toshiba

2SA1587-BL,LF(T by Toshiba is a PNP BJT transistor with max VCEsat of 0.3V and hFE of 350. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 125°C. Its GULL WING terminals make it suitable for surface mount designs.

Median Price

$0.048

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Overview

Upgrade your electronic projects with the 2SA1587-BL,LF(T by Toshiba, a high-quality PNP transistor designed for amplifier applications. With its reliable performance and durable construction, this transistor delivers exceptional value and benefits to customers. Whether you are a hobbyist or a professional, this transistor's versatility and efficiency make it a must-have component for your next project. Trust Toshiba's reputation for excellence and innovation in the electronics industry, and experience the advantages of using the 2SA1587-BL,LF(T in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring this specific polarity.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to manage connections.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable and efficient performance.

Surface Mount: YES

The surface mount feature enables easy placement on circuit boards, saving space and facilitating mass production.

Maximum VCEsat: 0.3 V

With a low saturation voltage, this transistor minimizes power loss and ensures efficient operation.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and secure mounting in various devices.

Terminal Form: GULL WING

The gull wing terminals provide strong connections and simplify soldering during manufacturing.

No. of Terminals: 3

Having three terminals allows for easy connectivity and versatility in circuit design.

Maximum Power Dissipation (Abs): 0.1 W

With a low power dissipation, this transistor operates efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables compact designs in electronic devices.

Maximum Power Dissipation Ambient: 0.1 W

The low power dissipation in ambient conditions ensures reliable and stable performance.

Minimum DC Current Gain (hFE): 350

The high DC current gain ensures accurate amplification and consistent signal output.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor remains reliable in various environments.

Maximum Collector-Emitter Voltage: 120 V

The high collector-emitter voltage rating allows this transistor to handle higher voltages.

Transistor Element Material: SILICON

The use of silicon as the element material ensures durability and reliability in operation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for various connection options.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency allows for high-speed signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-BL,LF(T attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-BL,LF(T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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