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2SA1587-GR,LF

Toshiba

2SA1587-GR,LF by Toshiba

The Toshiba 2SA1587-GR,LF is a PNP BJT transistor with max VCEsat of 0.3V and hFE of 200. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 125°C. With a package style of small outline, it features GULL WING terminals in a RECTANGULAR shape.

Median Price

$0.210

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Mouser Electronics

USA . 123 parts In-Stock

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123

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Nova Conductors

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Vyrian

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Advanced Electronics

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Overview

Upgrade your electronic projects with the 2SA1587-GR,LF by Toshiba, a top-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees peak performance. With Toshiba's renowned reputation for excellence in manufacturing, this PNP transistor is perfect for amplifier applications. Its low VCEsat of 0.3V and high DC current gain of 200 ensure optimal efficiency, while the compact Gull Wing package makes it easy to integrate into any design. Trust Toshiba for superior quality and reliability in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost effectiveness for the transistor.

Polarity or Channel Type: PNP

PNP transistors are often used in high-power applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Suitable for automated assembly processes and offers space-saving benefits in circuit designs.

Maximum VCEsat: 0.3 V

Low VCEsat ensures efficient operation and minimal power loss in amplifier applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting in circuit boards.

Terminal Form: GULL WING

Gull wing terminals are ideal for surface mount applications, providing secure connections.

No. of Terminals: 3

Simple 3-terminal design for straightforward integration into circuits.

Maximum Power Dissipation (Abs): 0.1 W

Low power dissipation ensures the transistor operates within safe temperature limits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board.

Maximum Power Dissipation Ambient: 0.1 W

Resists ambient temperature changes well due to low power dissipation.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures reliable amplification in the circuit.

Maximum Operating Temperature: 125 °C

Can operate in a wide range of temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 120 V

Can handle high voltage applications, adding versatility to circuit design.

Transistor Element Material: SILICON

Silicon offers high performance, reliability, and efficiency in transistor operation.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many amplifier applications.

Terminal Position: DUAL

Dual terminal position for easy mounting and connection in the circuit.

Nominal Transition Frequency (fT): 100 MHz

High frequency response suitable for amplifier applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-GR,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-GR,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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