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2SA1587-BL,LF

Toshiba

2SA1587-BL,LF by Toshiba

2SA1587-BL,LF by Toshiba is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.3V. It is commonly used as an amplifier in various applications. This surface mount transistor has a max collector-emitter voltage of 120V and a min DC current gain (hFE) of 350.

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Overview

Experience the exceptional quality and reliability of Toshiba with the 2SA1587-BL,LF transistor. As a leading manufacturer in the industry, Toshiba delivers outstanding performance and durability with every product. The 2SA1587-BL,LF is a small signal bipolar junction transistor that offers numerous advantages in amplifier applications. With its low VCEsat of 0.3V, this transistor ensures optimal efficiency and power dissipation. Its compact rectangular package shape and gull wing terminal form make it convenient for surface mount installations. Trust Toshiba's expertise and unlock the full potential of your amplifier designs with the 2SA1587-BL,LF transistor.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type:

PNP - The PNP configuration allows for easy integration with other components and circuits, enhancing the transistor's versatility.

Configuration:

SINGLE - The single configuration simplifies the transistor's design and improves its performance for amplifier applications.

Transistor Application:

AMPLIFIER - Specifically designed for amplification purposes, this transistor is an excellent choice to enhance signals in audio or radio frequency applications.

Surface Mount:

YES - With surface mount capability, this transistor offers easy and efficient installation, making it suitable for compact designs and automated production processes.

Maximum VCEsat:

0.3 V - The low maximum Collector-Emitter saturation voltage ensures minimal voltage loss across the transistor, enabling efficient power amplification.

Package Shape:

RECTANGULAR - The rectangular package shape provides ease of mounting and compatibility with standardized PCB layouts.

Terminal Form:

GULL WING - The gull wing terminal form simplifies soldering and ensures strong mechanical connections, improving the overall reliability of the transistor.

No. of Elements:

1 - Having a single element simplifies circuit design and allows for straightforward integration.

No. of Terminals:

3 - The three terminals provide flexible connection options for different circuit configurations, offering versatility in application.

Maximum Power Dissipation (Abs):

0.1 W - With a low maximum power dissipation, this transistor can operate efficiently without generating excessive heat, ensuring long-term reliability.

Package Style (Meter):

SMALL OUTLINE - The small outline package style reduces the footprint of the transistor, making it space-saving and suitable for miniaturized electronic systems.

Maximum Power Dissipation Ambient:

0.1 W - The low maximum power dissipation ambient ensures that the transistor can operate reliably even under varying ambient temperature conditions.

Minimum DC Current Gain (hFE):

350 - The high minimum DC current gain of 350 ensures accurate amplification and improves the stability of the transistor in amplifier circuits.

Maximum Operating Temperature:

125 °C - The high maximum operating temperature allows the transistor to withstand elevated temperatures, expanding its suitability for various applications.

Maximum Collector-Emitter Voltage:

120 V - The high maximum Collector-Emitter voltage rating provides design flexibility and allows for applications with higher voltage requirements.

Transistor Element Material:

SILICON - Silicon is a widely used and reliable material for transistor elements, ensuring stable and consistent performance over the product's lifetime.

Maximum Collector Current (IC):

0.1 A - The high maximum Collector current rating allows for reliable current handling, making this transistor suitable for applications requiring higher currents.

Terminal Position:

DUAL - The dual terminal position offers flexibility in PCB layout and facilitates efficient routing of connections.

Nominal Transition Frequency (fT):

100 MHz - The high nominal transition frequency allows for efficient amplification of high-frequency signals, making this transistor ideal for use in radio and communication systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-BL,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-BL,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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