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2SA1587-GR

Toshiba

2SA1587-GR by Toshiba

The Toshiba 2SA1587-GR is a PNP BJT transistor with max VCEsat of 0.3V and hFE of 200, ideal for amplifier applications. It has a max IC of 0.1A, fT of 100MHz, and operates up to 125°C. This surface-mount device comes in a small outline package with GULL WING terminals.

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Overview

Get ready to experience top-notch quality and performance with the Toshiba 2SA1587-GR Small Signal Bipolar Junction Transistor. Manufactured by industry leader Toshiba, this PNP transistor is perfect for amplifier applications. Its compact design, low VCEsat, and high DC current gain ensure efficient and reliable performance. Whether you're a hobbyist or a professional, this transistor's high collector-emitter voltage and maximum power dissipation make it a versatile choice for your electronics projects. Trust Toshiba for exceptional quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for portable applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other components in a circuit, enhancing overall performance.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to work with for projects of various complexities.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliable signal amplification.

Surface Mount: YES

Being surface mountable, this transistor is easy to integrate into printed circuit boards for compact and space-saving designs.

Maximum VCEsat: 0.3 V

With a low maximum VCEsat value of 0.3 V, this transistor provides efficient and low power dissipation in operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on a PCB, maximizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections while also enabling easy and reliable soldering during assembly.

No. of Terminals: 3

The 3 terminals offer flexibility in connecting the transistor to other components, allowing for versatile circuit configurations.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1 W, this transistor can handle moderate power levels, suitable for a range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact and efficient designs, especially beneficial for space-constrained projects.

Maximum Power Dissipation Ambient: 0.1 W

With a maximum power dissipation of 0.1 W in ambient conditions, this transistor can operate reliably without overheating.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures a strong and consistent amplification performance in various circuit configurations.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor is suitable for use in a wide range of environments.

Maximum Collector-Emitter Voltage: 120 V

The high maximum collector-emitter voltage rating of 120 V allows for safe operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

The use of silicon material in the transistor element provides reliable and stable performance over a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures reliable solder connections and corrosion resistance for long-term durability.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connecting the transistor, making it versatile for different circuit layouts.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100 MHz, this transistor supports high-frequency applications with efficient signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-GR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-GR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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