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2SA1163-GR,LF

Toshiba

2SA1163-GR,LF by Toshiba

Toshiba's 2SA1163-GR,LF is a PNP BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for amplifier applications, it has a max IC of 0.1A and fT of 100MHz. The small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.260

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Overview

Unleash the power of high-quality amplification with the Toshiba 2SA1163-GR,LF Small Signal Bipolar Junction Transistor. Manufactured by Toshiba, a leader in semiconductor technology, this PNP transistor offers superior performance and reliability. Ideal for amplifier applications, this surface-mount transistor boasts a low VCEsat of 0.3V and a DC current gain of 200, ensuring efficient power usage. Whether you're a hobbyist or a professional, the 2SA1163-GR,LF provides exceptional value and performance for all your amplification needs. Upgrade your projects today with Toshiba's trusted technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, which makes this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular shape is commonly used in small signal transistors, providing a compact design for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals provide easy soldering onto circuit boards, ensuring secure connections.

No. of Terminals: 3

3 terminals provide the necessary connections for the transistor to function in a circuit.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power dissipation capability ensures the transistor can handle power without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style is suitable for compact designs and miniaturized electronic devices.

Maximum Power Dissipation Ambient: 0.15 W

The ambient power dissipation rating indicates the maximum power the transistor can safely handle in real-world operating conditions.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures proper signal amplification in amplifier circuits.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the transistor to function reliably in various environmental conditions.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance helps in reducing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 120 V

High collector-emitter voltage rating provides versatility for use in different voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor applications.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating ensures the transistor can handle the required current in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and layout.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1163-GR,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1163-GR,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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