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2SA1587-GR,LF(T

Toshiba

2SA1587-GR,LF(T by Toshiba

Toshiba's 2SA1587-GR,LF(T is a PNP BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for amplifier applications, it has a max IC of 0.1A, fT of 100MHz, and can handle up to 120V. This surface-mount device in a small outline package is designed for high-performance amplification tasks.

Median Price

$0.060

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10

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1k+

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Newark

USA . 17,400 parts In-Stock

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$0.018

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$0.018

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Element14

Singapore . 29,820 parts In-Stock

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$0.060

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$0.033

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$0.028

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$0.060

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Farnell

UK . 14,700 parts In-Stock

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$0.064

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$0.043

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$0.036

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$0.064

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Verical

USA . 10,377 parts In-Stock

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$0.071

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$0.040

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Chip1Stop

Japan . 813 parts In-Stock

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$0.050

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$0.044

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$0.043

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Nova Conductors

Japan . 73 parts In-Stock

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$0.053

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73

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Bristol Electronics

USA . 177 parts In-Stock

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$0.113

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$0.056

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177

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Vyrian

USA . 19,284 parts In-Stock

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NAC Semi

USA . 9,000 parts In-Stock

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VNN

France . 1,371 parts In-Stock

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Ampacity Inc.

Singapore . 19,341 parts In-Stock

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$0.024

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Argo Parts USA

USA . 3,663 parts In-Stock

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$0.049

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Bastille Electronics

Australia . 10 parts In-Stock

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$0.053

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$0.050

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$0.048

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$0.047

10

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Continental Prestige Electronics

USA . 33,210 parts In-Stock

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$0.196

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$0.081

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$0.043

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$0.032

33,210

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$0.081

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$0.032

Perfect Parts

USA . 43,680 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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$0.070

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iodParts Technologies Inc.

India . 10,705 parts In-Stock

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Metaverse IC Inc.

Canada . 7,500 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Elevate your electronic projects with the 2SA1587-GR,LF(T by Toshiba. Known for their superior quality and reliability, Toshiba offers Small Signal Bipolar Junction Transistors that are perfect for amplifier applications. With a low VCEsat and high DC current gain, this PNP transistor delivers exceptional performance. Its compact design and surface mount capability make it ideal for space-constrained projects. Trust Toshiba for cutting-edge technology that enhances your designs and brings your ideas to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to integrate into different electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient PCB assembly in modern electronic devices.

Maximum VCEsat: 0.3 V

Low VCEsat value minimizes power loss and improves efficiency in amplifier circuits where low voltage drop is crucial.

Terminal Form: GULL WING

Gull wing terminals provide easy soldering and secure connection, enhancing the reliability of the transistor in electronic circuits.

No. of Terminals: 3

The 3-terminal configuration simplifies circuit connections and integration, making it user-friendly for designers.

Maximum Power Dissipation (Abs): 0.1 W

With a low power dissipation value, this transistor operates efficiently while minimizing heat generation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for compact electronic devices.

Maximum Power Dissipation Ambient: 0.1 W

The low power dissipation in ambient conditions ensures reliable operation and minimizes the risk of overheating.

Minimum DC Current Gain (hFE): 200

A high DC current gain ensures effective amplification, making this transistor suitable for various amplifier applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperatures and operate reliably in harsh environments.

Maximum Collector-Emitter Voltage: 120 V

The high collector-emitter voltage rating allows the transistor to handle higher voltage levels, expanding its range of potential applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and consistency, ensuring stable performance of the transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels without compromising its performance.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easy connection to external components.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency allows for fast switching and amplification in high-frequency applications, making this transistor versatile and efficient.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-GR,LF(T attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-GR,LF(T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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