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2SA1587-GR,LF(B

Toshiba

2SA1587-GR,LF(B by Toshiba

The Toshiba 2SA1587-GR,LF(B is a PNP BJT transistor with max VCEsat of 0.3V and hFE of 200. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 125°C. Its GULL WING terminals make it suitable for surface mount designs.

Median Price

$0.083

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Overview

Enhance your electronic projects with the 2SA1587-GR,LF(B by Toshiba. Known for their superior quality and reliability, Toshiba's small signal bipolar junction transistors offer outstanding performance in amplifier applications. With a low VCEsat of 0.3V and a high DC current gain of 200, this PNP transistor provides excellent amplification capabilities. Its compact design and surface mount package make it ideal for space-constrained projects. Trust Toshiba to deliver exceptional value and functionality with the 2SA1587-GR,LF(B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material makes the product suitable for various applications where ruggedness is required.

Polarity or Channel Type: PNP

The PNP configuration allows for easier integration into existing circuits that require this specific type of transistor.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to use in projects requiring only one transistor.

Transistor Application: AMPLIFIER

Ideal for use in amplifier circuits, providing high gain and low noise for audio or signal processing applications.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and allowing for automated assembly in large-scale production.

Maximum VCEsat: 0.3 V

Low maximum VCEsat ensures minimal power loss and high efficiency in operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on the PCB for efficient circuit design.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections and allow for easy inspection during assembly.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable use in a wide range of applications.

Maximum Power Dissipation (Abs): 0.1 W

With a low power dissipation, the transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for densely packed circuits.

Maximum Power Dissipation Ambient: 0.1 W

Can safely dissipate heat in various ambient conditions, ensuring reliable performance in different environments.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures stable and consistent amplification in transistor circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 120 V

Able to handle high collector-emitter voltages, making it suitable for applications requiring high voltage operation.

Transistor Element Material: SILICON

Silicon material ensures high reliability, low leakage, and excellent performance in a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

The transistor can handle moderate collector currents, making it suitable for low to medium power applications.

Terminal Position: DUAL

Dual terminal position facilitates easy mounting and connection in circuits, providing versatility in circuit design.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for high-frequency amplification, making it suitable for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1587-GR,LF(B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1587-GR,LF(B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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