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2SA1162-GR,LF

Toshiba

2SA1162-GR,LF by Toshiba

The Toshiba 2SA1162-GR,LF is a PNP BJT transistor with max VCEsat of 0.3V and hFE of 200. Ideal for amplifier applications, it has a max IC of 0.15A and fT of 80MHz. Its GULL WING terminals make it suitable for surface mount designs in compact electronic devices.

Median Price

$0.145

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796

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Avnet

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Component Stockers USA

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Overview

Enhance your audio devices with the 2SA1162-GR,LF by Toshiba, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Toshiba, this PNP transistor delivers outstanding performance in amplifier applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 200, this transistor offers excellent power dissipation and high collector current. Its compact, surface-mount design makes it perfect for space-constrained projects. Trust Toshiba for reliability and innovation in transistor technology. Upgrade your electronics with the 2SA1162-GR,LF for superior sound quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are often used in high power applications and have low saturation voltage, making them suitable for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and provides ease of use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, suitable for modern electronic devices with limited space.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power dissipation and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy integration into circuit designs.

Terminal Form: GULL WING

Gull wing terminals facilitate surface mounting and reliable solder connections for efficient PCB assembly.

No. of Terminals: 3

Three terminals provide necessary connections for biasing and signal amplification in amplifier circuits.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation ensures reliable operation and prevents overheating in amplifier applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCB and facilitates compact designs in electronic devices.

Maximum Power Dissipation Ambient: 0.15 W

Maintaining low power dissipation in ambient conditions ensures stable performance and reliability of the transistor.

Minimum DC Current Gain (hFE): 200

High DC current gain enables efficient signal amplification in amplifier circuits, improving overall performance.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the transistor to function reliably in various environmental conditions.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance minimizes signal distortion and improves frequency response in amplifier circuits.

Maximum Collector-Emitter Voltage: 50 V

Adequate collector-emitter voltage rating allows for safe operation in amplifier circuits without risk of breakdown.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its stability and performance in electronic devices.

Maximum Collector Current (IC): 0.15 A

Sufficient collector current rating ensures the transistor can handle the required current levels in amplifier circuits.

Terminal Position: DUAL

Dual terminal position simplifies PCB layout and facilitates proper connections in amplifier circuits.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for efficient signal amplification in amplifier circuits, ensuring accurate reproduction of input signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1162-GR,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1162-GR,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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