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BC846BW,115

NXP Semiconductors

BC846BW,115 by NXP Semiconductors

BC846BW,115 by NXP Semiconductors is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its low VCEsat of 0.6V and high DC current gain (hFE) of 200.

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EBV Elektronik

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Verical

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Element14

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Rochester

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Maritex

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IBS Electronics

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NAC Semi

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Martec Srl

Italy . 322,757 parts In-Stock

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Ampacity Inc.

Singapore . 944,278 parts In-Stock

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Corphita

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AZTECH Wire

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Argo Parts USA

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Netroflash

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Modulus Dynamics

Lithuania . 24,709 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

South Africa . 541 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

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Continental Prestige Electronics

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RC Electronics

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QUARKTWIN TECHNOLOGY LTD

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Allen Electronics Distributors

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Brazil . 9,728 parts In-Stock

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Lucentia Tech

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GreenTree Electronics

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Lixinc

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Authorized Procurement Solutions

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Overview

Discover the BC846BW,115 by NXP Semiconductors - a high-quality small signal bipolar junction transistor that offers outstanding performance and reliability. Manufactured by NXP Semiconductors, a renowned name in the industry, this NPN transistor is perfect for switching applications. With its surface mount capability and low VCEsat of just 0.6V, it ensures efficient and seamless operation. The BC846BW,115 also features a maximum collector-emitter voltage of 65V and a minimum DC current gain of 200, making it suitable for a wide range of electronic projects. Trust NXP Semiconductors for innovative solutions and experience the benefits and advantages that the BC846BW,115 brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications

Configuration: SINGLE

Simplified design with only one transistor in the package

Transistor Application: SWITCHING

Suitable for switching applications due to high switching speed

Surface Mount: YES

Allows for easy and secure PCB mounting

Maximum VCEsat: 0.6 V

Low saturation voltage results in reduced power loss and improved efficiency

Package Shape: RECTANGULAR

Provides efficient use of space on the PCB

Terminal Form: GULL WING

Facilitates easy soldering and ensures mechanical stability

No. of Terminals: 3

Simplified connection and integration into the circuit

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB

Minimum DC Current Gain (hFE): 200

High current gain allows for small base current to control larger collector current

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments

Maximum Collector-Base Capacitance: 3 pF

Low capacitance reduces the risk of high-frequency oscillations

Maximum Collector-Emitter Voltage: 65 V

Can handle higher voltages, suitable for various applications

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector current levels

Terminal Finish: TIN

Provides good conductivity for reliable connections

Terminal Position: DUAL

Offers flexibility in PCB layout and connections

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process without damage

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846BW,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC846BW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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