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BCV47E6433HTMA1

Infineon Technologies

BCV47E6433HTMA1 by Infineon Technologies

BCV47E6433HTMA1 by Infineon is a NPN Darlington BJT with 2000 hFE, 60V VCE, and 170MHz fT. Ideal for applications requiring high current gain and voltage amplification in compact electronic devices due to its small outline package and surface mount capability.

Median Price

$0.088

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 40,000 parts In-Stock

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40,000

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Rochester

USA . 9,775 parts In-Stock

1+ parts

-

100+ parts

$0.088

1k+ parts

$0.073

10k+ parts

$0.065

9,775

-

$0.088

$0.073

$0.065

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 99 parts In-Stock

1+ parts

$0.113

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99

$0.113

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Vyrian

USA . 7,129 parts In-Stock

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7,129

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VNN

France . 3,772 parts In-Stock

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Digiode

USA . 551 parts In-Stock

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551

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,330 parts In-Stock

1+ parts

$0.113

100+ parts

-

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$0.111

3,330

$0.113

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$0.111

Argo Parts USA

USA . 2,210 parts In-Stock

1+ parts

$0.113

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$0.110

2,210

$0.113

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$0.110

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.113

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1,000

$0.113

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Aztec Data Supply Inc.

USA . 155 parts In-Stock

1+ parts

$0.409

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155

$0.409

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Component Stockers USA

USA . 115,114 parts In-Stock

1+ parts

$0.680

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$0.680

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Corohmni

South Africa . 180 parts In-Stock

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$1.027

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180

$1.027

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Modulus Dynamics

Lithuania . 13,001 parts In-Stock

1+ parts

$1.759

100+ parts

$1.689

1k+ parts

$1.618

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13,001

$1.759

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$1.618

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Ampacity Inc.

Singapore . 1,258 parts In-Stock

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$9.050

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$9.050

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AZTECH Wire

Italy . 1,195 parts In-Stock

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$19.500

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QUARKTWIN TECHNOLOGY LTD

USA . 8,820 parts In-Stock

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Corphita

USA . 787 parts In-Stock

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787

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Overview

Unlock the power of innovation with the BCV47E6433HTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies brings you a high-quality Small Signal Bipolar Junction Transistor (BJT) that is versatile and reliable. Ideal for a wide range of applications, this NPN Darlington transistor offers exceptional performance and durability. With a minimum DC current gain of 2000 and a maximum collector-emitter voltage of 60V, this transistor is designed to exceed expectations. Experience the value, benefits, and advantages that the BCV47E6433HTMA1 has to offer – take your projects to the next level with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY -

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable and long-lasting applications.

Polarity: NPN -

The NPN configuration allows for easy integration with other NPN transistors and components for seamless circuit design.

Configuration: DARLINGTON -

The Darlington configuration provides high current gain and low saturation voltage, making this transistor ideal for high-power applications.

Surface Mount: YES -

Being surface mountable allows for easy and efficient PCB assembly, saving time and space in circuit design.

Package Shape: RECTANGULAR -

The rectangular shape provides a compact footprint, making it suitable for designs where space is limited.

Terminal Form: GULL WING -

The gull wing terminals offer secure soldering and excellent mechanical stability, ensuring reliable connections in harsh environments.

No. of Terminals: 3 -

The three terminals provide flexibility in circuit design, allowing for easy connections to other components.

Package Style: SMALL OUTLINE -

The small outline package style saves space on the PCB, making it ideal for compact designs.

Minimum DC Current Gain (hFE): 2000 -

With a high DC current gain of 2000, this transistor offers excellent amplification capabilities for reliable signal processing.

Maximum Collector-Emitter Voltage: 60 V -

The high maximum voltage rating of 60V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON -

The use of silicon as the transistor element material ensures high performance, reliability, and stability in various operating conditions.

Maximum Collector Current (IC): 0.5 A -

The maximum collector current of 0.5A allows for handling moderate levels of current, making it suitable for low to medium power applications.

Terminal Position: DUAL -

The dual terminal position provides flexibility in mounting options, offering versatility in circuit layout.

Nominal Transition Frequency (fT): 170 MHz -

With a high nominal transition frequency of 170MHz, this transistor is capable of fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV47E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCV47E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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