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BCV47QTA

Diodes Incorporated

BCV47QTA by Diodes Incorporated

Diodes Inc. BCV47QTA is a NPN BJT transistor with hFE of 2000, VCE of 60V, and fT of 170MHz. Ideal for automotive applications due to AEC-Q101 standard compliance and Darlington configuration in small outline package.

Median Price

$0.216

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,364 parts In-Stock

1+ parts

$0.380

100+ parts

$0.146

1k+ parts

$0.096

10k+ parts

$0.085

6,364

$0.380

$0.146

$0.096

$0.085

Verical

USA . 231,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.051

231,000

-

-

-

$0.051

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.100

100+ parts

-

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-

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10

$0.100

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Vyrian

USA . 86,009 parts In-Stock

1+ parts

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86,009

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-

-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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VNN

France . 2,439 parts In-Stock

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2,439

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 83,559 parts In-Stock

1+ parts

$0.094

100+ parts

-

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-

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83,559

$0.094

-

-

-

Argo Parts USA

USA . 4,864 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

$0.097

4,864

$0.100

-

-

$0.097

Continental Prestige Electronics

USA . 2,380 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

2,380

$0.100

-

-

$0.098

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

$0.095

10k+ parts

$0.093

100

$0.100

-

$0.095

$0.093

Corohmni

South Africa . 116 parts In-Stock

1+ parts

$0.825

100+ parts

-

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116

$0.825

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Aztec Data Supply Inc.

USA . 325 parts In-Stock

1+ parts

$1.530

100+ parts

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325

$1.530

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-

-

RC Electronics

USA . 138,106 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

$0.090

10k+ parts

$0.090

138,106

-

$0.100

$0.090

$0.090

Lixinc

USA . 19,378 parts In-Stock

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19,378

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Futuretech Components

Singapore . 10,000 parts In-Stock

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10,000

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Eastek

USA . 6,000 parts In-Stock

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6,000

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT) for your electronic projects? Look no further than the BCV47QTA by Diodes Incorporated. This NPN Darlington transistor is designed with precision and expertise to ensure optimal performance in a wide range of applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 2000, this transistor offers excellent value and reliability to customers. Trust Diodes Incorporated for all your semiconductor needs and experience the benefits of top-notch engineering and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile in a variety of electronic circuits, making this product a popular choice.

Configuration: DARLINGTON

Darlington configuration offers high current gain, making this transistor suitable for applications requiring amplification of weak signals.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving space and simplifying production processes.

Maximum Collector-Emitter Voltage: 60 V

With a high voltage rating, this transistor can handle a wide range of applications that may require higher voltage levels.

Nominal Transition Frequency (fT): 170 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV47QTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCV47QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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