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BCV47,215

NXP Semiconductors

BCV47,215 by NXP Semiconductors

NXP Semiconductors' BCV47,215 is a NPN Darlington BJT with 1V VCEsat and 10000 hFE. Ideal for amplifier applications, it has a max IC of 0.5A, 60V VCEO, and operates up to 150°C. This small outline transistor in gull wing package offers high transition frequency at 220MHz.

Median Price

$0.122

Lifecycle Status

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33

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1k+

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Chip1Stop

Japan . 2,950 parts In-Stock

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$0.409

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Newark

USA . 336 parts In-Stock

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$0.648

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$0.298

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Element14

Singapore . 382,227 parts In-Stock

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$0.102

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$0.085

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EBV Elektronik

Germany . 348,000 parts In-Stock

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Farnell

UK . 124,701 parts In-Stock

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RS (Exports)

UK . 29,700 parts In-Stock

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TTI

USA . 15,000 parts In-Stock

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Rochester

USA . 3,965 parts In-Stock

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$0.132

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$0.109

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$0.098

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Bürklin Elektronik

Germany . 2,990 parts In-Stock

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Verical

USA . 2,965 parts In-Stock

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Arrow

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Digiode

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Nova Conductors

Japan . 39 parts In-Stock

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Forefront Electronics and Design

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Ozdisan Elektronik

Türkiye . 1,439 parts In-Stock

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$69.519

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Classic Components Corporation

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NAC Semi

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Chip Stock

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IBS Electronics

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Sensible Micro Corp

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LIBRA Elektronik GmbH

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Bristol Electronics

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Rebound Electronics

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Semicontronic

India . 704,715 parts In-Stock

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$0.034

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Ampacity Inc.

Singapore . 170,542 parts In-Stock

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Component Stockers USA

USA . 626,577 parts In-Stock

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Corphita

USA . 2,520 parts In-Stock

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AZTECH Wire

Italy . 12,019 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 123 parts In-Stock

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Continental Prestige Electronics

USA . 388,020 parts In-Stock

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Advanced Electronics

New Zealand . 4,973 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,761 parts In-Stock

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GreenTree Electronics

Israel . 1,143,000 parts In-Stock

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Eastek

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Perfect Parts

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Kepictronics

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RC Electronics

USA . 115,318 parts In-Stock

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Epart123

USA . 99,000 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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UNI Independent Distributors

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Robosynatics

Brazil . 2,081 parts In-Stock

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$1.527

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$1.496

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Lucentia Tech

USA . 2,081 parts In-Stock

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$1.527

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Corohmni

South Africa . 1,565 parts In-Stock

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Supply Digital

USA . 722 parts In-Stock

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Overview

Upgrade your electronics with the BCV47,215 from NXP Semiconductors, a top-tier manufacturer of small signal bipolar junction transistors (BJTs). This NPN Darlington transistor is perfect for amplifier applications and features a maximum VCEsat of 1V, ensuring optimal performance. With a compact package shape and gull wing terminals, this transistor offers easy installation and superior power dissipation. Experience enhanced functionality and reliability with the BCV47,215 - the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used configuration with good amplification properties.

Configuration: DARLINGTON

Offers high current gain and amplification capabilities, ideal for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum VCEsat: 1 V

Low saturation voltage ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Provides a compact and space-saving design for easier integration into circuits.

Terminal Form: GULL WING

Enables secure soldering and connection to the circuit board.

No. of Terminals: 3

Simple and straightforward connection setup.

Maximum Power Dissipation (Abs): 0.35 W

Can handle high power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 10000

High current gain ensures accurate signal amplification.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 60 V

Allows for handling higher voltage levels safely.

Transistor Element Material: SILICON

Well-known material with good conductivity and durability.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels without issues.

Terminal Finish: TIN

Provides a reliable and corrosion-resistant terminal finish.

Terminal Position: DUAL

Facilitates easy and secure connection to the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for a short duration.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 220 MHz

High transition frequency ensures fast response and signal processing capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV47,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

BCV47,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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