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BCV49,115

NXP Semiconductors

BCV49,115 by NXP Semiconductors

BCV49,115 by NXP Semiconductors is a NPN Darlington transistor with 1W power dissipation and 60V collector-emitter voltage. Ideal for amplifier applications, it has a transition frequency of 220MHz and high DC current gain of 2000. Suitable for surface mount with a small outline package style.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 240 parts In-Stock

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$0.411

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$0.195

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$0.188

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240

$0.411

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$0.188

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Farnell

UK . 1,200 parts In-Stock

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$0.557

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$0.212

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$0.203

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$0.557

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Verical

USA . 69,000 parts In-Stock

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$0.132

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$0.103

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Arrow

USA . 69,000 parts In-Stock

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$0.132

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$0.103

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$0.132

$0.103

Chip1Stop

Japan . 4,000 parts In-Stock

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$0.140

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$0.140

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RS (Exports)

UK . 2,780 parts In-Stock

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$0.159

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$0.156

2,780

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$0.159

$0.156

EBV Elektronik

Germany . 1,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$0.157

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$0.157

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Digiode

USA . 358 parts In-Stock

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$0.390

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358

$0.390

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Chip Stock

USA . 158,000 parts In-Stock

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NAC Semi

USA . 89,000 parts In-Stock

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$0.187

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IBS Electronics

USA . 7,000 parts In-Stock

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$0.140

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$0.134

7,000

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$0.134

Vyrian

USA . 5,936 parts In-Stock

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5,936

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Sensible Micro Corp

USA . 5,796 parts In-Stock

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Anansix

USA . 722 parts In-Stock

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Martec Srl

Italy . 241 parts In-Stock

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VNN

France . 227 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 12,072 parts In-Stock

1+ parts

$0.089

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12,072

$0.089

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Aranea Global

USA . 2,000 parts In-Stock

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$0.154

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$0.148

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2,000

$0.154

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$0.148

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Argo Parts USA

USA . 1,683 parts In-Stock

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$0.157

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$0.152

1,683

$0.157

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$0.152

Semicontronic

India . 13,491 parts In-Stock

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$0.194

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$0.189

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$0.188

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13,491

$0.194

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AZTECH Wire

Italy . 11,558 parts In-Stock

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$0.280

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Corphita

USA . 912 parts In-Stock

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$0.370

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$0.370

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Aztec Data Supply Inc.

USA . 2,504 parts In-Stock

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$0.450

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$0.450

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Continental Prestige Electronics

USA . 470 parts In-Stock

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$0.483

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$0.236

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Corohmni

South Africa . 51 parts In-Stock

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$0.540

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Perfect Parts

USA . 49,280 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 4,890 parts In-Stock

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Supply Digital

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UNI Independent Distributors

Spain . 2,584 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Kepictronics

USA . 35 parts In-Stock

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Overview

Discover the BCV49,115 by NXP Semiconductors, a top-of-the-line Small Signal Bipolar Junction Transistor that offers unmatched quality and reliability. With its NPN Darlington configuration, this transistor is perfect for amplifier applications. The BCV49,115's maximum VCEsat of 1V and impressive DC Current Gain make it a standout choice in the market. Whether you're a hobbyist or a professional, this transistor's high performance and durability ensure that your projects will run smoothly. Upgrade your electronics with the BCV49,115 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making the transistor efficient for amplification tasks.

Maximum VCEsat: 1 V

Low VCEsat value indicates minimal power loss in the saturation region, leading to higher efficiency in amplification.

Maximum Power Dissipation (Abs): 1 W

With a high maximum power dissipation, this transistor can handle larger power loads without overheating.

Minimum DC Current Gain (hFE): 2000

High DC current gain ensures stable and reliable amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for versatility in application environments and ensures reliable performance under varying conditions.

Maximum Collector-Emitter Voltage: 60 V

High maximum VCE voltage rating provides flexibility in circuit design and allows for safe operation in higher voltage applications.

Nominal Transition Frequency (fT): 220 MHz

High transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency amplification tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV49,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

BCV49,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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