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BCV47,235

NXP Semiconductors

BCV47,235 by NXP Semiconductors

BCV47,235 by NXP Semiconductors is a NPN Darlington transistor with a max VCEsat of 1V and hFE of 10000, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, operating temperature up to 150°C, and transition frequency of 220MHz. This small outline package transistor is surface mountable with Gull Wing terminals.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,968 parts In-Stock

1+ parts

$0.390

100+ parts

$0.151

1k+ parts

$0.100

10k+ parts

$0.077

1,968

$0.390

$0.151

$0.100

$0.077

Mouser Electronics

USA . 637 parts In-Stock

1+ parts

$0.530

100+ parts

$0.229

1k+ parts

$0.126

10k+ parts

$0.084

637

$0.530

$0.229

$0.126

$0.084

Arrow

USA . 40,000 parts In-Stock

1+ parts

-

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40,000

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Verical

USA . 40,000 parts In-Stock

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40,000

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Chip1Stop

Japan . 40,000 parts In-Stock

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$0.045

40,000

-

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-

$0.045

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.098

100+ parts

-

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100

$0.098

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Digiode

USA . 4,883 parts In-Stock

1+ parts

$0.247

100+ parts

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4,883

$0.247

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Chip Stock

USA . 107,000 parts In-Stock

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107,000

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VNN

France . 18,387 parts In-Stock

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Vyrian

USA . 5,315 parts In-Stock

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5,315

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Anansix

USA . 1,779 parts In-Stock

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1,779

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Distributors (Availability)

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Semicontronic

India . 71,791 parts In-Stock

1+ parts

$0.038

100+ parts

$0.037

1k+ parts

$0.037

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-

71,791

$0.038

$0.037

$0.037

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Continental Prestige Electronics

USA . 5,120 parts In-Stock

1+ parts

$0.098

100+ parts

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$0.096

5,120

$0.098

-

-

$0.096

Argo Parts USA

USA . 2,072 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

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10k+ parts

$0.095

2,072

$0.098

-

-

$0.095

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.098

100+ parts

$0.096

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1,000

$0.098

$0.096

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Corphita

USA . 4,213 parts In-Stock

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$0.234

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4,213

$0.234

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AZTECH Wire

Italy . 5,315 parts In-Stock

1+ parts

$0.320

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5,315

$0.320

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Aztec Data Supply Inc.

USA . 4,410 parts In-Stock

1+ parts

$0.390

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4,410

$0.390

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Corohmni

South Africa . 247 parts In-Stock

1+ parts

$0.885

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247

$0.885

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.982

100+ parts

$0.894

1k+ parts

$0.805

10k+ parts

-

50

$0.982

$0.894

$0.805

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Authorized Procurement Solutions

USA . 17,000 parts In-Stock

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17,000

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UNI Independent Distributors

Spain . 4,003 parts In-Stock

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Supply Digital

USA . 1,030 parts In-Stock

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Perfect Parts

USA . 840 parts In-Stock

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840

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Overview

Discover the BCV47,235 by NXP Semiconductors - a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. With its NPN configuration and Darlington design, this transistor is perfect for amplifier applications. Its compact size and impressive power dissipation make it ideal for space-constrained projects. Trust NXP Semiconductors to deliver top-notch products that meet your needs. Upgrade your electronics with the BCV47,235 and experience superior quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for high sensitivity in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying assembly.

Maximum VCEsat: 1 V

Low VCEsat reduces power loss and improves efficiency in amplifier circuits.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections and facilitate soldering during assembly.

Maximum Power Dissipation (Abs): 0.25 W

Efficient power dissipation ensures the transistor can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 10000

High DC current gain ensures accurate and stable amplification in transistor circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High VCE rating ensures the transistor can handle high voltage levels in amplifier circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them ideal for amplifier applications.

Maximum Collector Current (IC): 0.5 A

Sufficient collector current rating allows the transistor to handle high current levels in amplifier circuits.

Terminal Finish: TIN

Tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections.

Nominal Transition Frequency (fT): 220 MHz

High transition frequency allows for fast switching and amplification in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV47,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

BCV47,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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