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BCV47E6327HTSA1

Infineon Technologies

BCV47E6327HTSA1 by Infineon Technologies

BCV47E6327HTSA1 by Infineon is a NPN Darlington BJT with 3 terminals, max. power dissipation of 0.36W, and min. DC current gain of 2000. It operates up to 150°C, has a max. collector-emitter voltage of 60V, and nominal transition frequency of 170MHz. Ideal for small signal applications requiring high current gain and low power dissipation in compact designs.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 422 parts In-Stock

1+ parts

$0.740

100+ parts

$0.326

1k+ parts

$0.149

10k+ parts

$0.132

422

$0.740

$0.326

$0.149

$0.132

Adafruit Industries

USA . 20 parts In-Stock

1+ parts

$1.290

100+ parts

$1.174

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$1.058

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20

$1.290

$1.174

$1.058

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Arrow

USA . 90,000 parts In-Stock

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$0.046

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$0.046

Verical

USA . 90,000 parts In-Stock

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$0.046

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$0.046

RS (Exports)

UK . 15,855 parts In-Stock

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$0.073

15,855

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$0.073

Distributors (In-Stock)

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Nova Conductors

Japan . 70 parts In-Stock

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$0.113

100+ parts

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70

$0.113

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Digiode

USA . 419 parts In-Stock

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$0.228

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419

$0.228

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Vyrian

USA . 225,177 parts In-Stock

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Schukat

Germany . 38,000 parts In-Stock

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$0.084

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$0.058

10k+ parts

$0.056

38,000

-

$0.084

$0.058

$0.056

Flip Electronics

USA . 18,000 parts In-Stock

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Rutronik

Germany . 12,000 parts In-Stock

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$0.079

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$0.079

Micros

Poland . 8,700 parts In-Stock

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8,700

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ComSIT Distribution GmbH

Germany . 6,100 parts In-Stock

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ComSIT USA

USA . 6,100 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.336

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$0.336

IBS Electronics

USA . 6,000 parts In-Stock

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$0.092

6,000

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$0.092

Partservice

France . 4,940 parts In-Stock

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$0.109

10k+ parts

$0.042

4,940

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$0.042

VNN

France . 4,053 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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$0.117

10k+ parts

$0.045

3,000

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$0.117

$0.045

Semi Source

USA . 1,874 parts In-Stock

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1,874

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TME

Poland . 955 parts In-Stock

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$0.073

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Extreme Components

USA . 600 parts In-Stock

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600

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Distributors (Availability)

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Ampacity Inc.

Singapore . 117,469 parts In-Stock

1+ parts

$0.039

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$0.039

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Semicontronic

India . 115,246 parts In-Stock

1+ parts

$0.039

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$0.038

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$0.038

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$0.039

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$0.038

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Continental Prestige Electronics

USA . 6,600 parts In-Stock

1+ parts

$0.100

100+ parts

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$0.098

6,600

$0.100

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$0.098

Argo Parts USA

USA . 2,779 parts In-Stock

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$0.100

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$0.097

2,779

$0.100

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$0.097

Netroflash

USA . 2,000 parts In-Stock

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$0.113

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$0.113

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Corphita

USA . 573 parts In-Stock

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$0.216

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Component Stockers USA

USA . 3,338,691 parts In-Stock

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$0.440

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$0.120

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$0.100

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$0.040

3,338,691

$0.440

$0.120

$0.100

$0.040

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.290

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$1.174

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$1.058

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20

$1.290

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Aztec Data Supply Inc.

USA . 191 parts In-Stock

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$1.331

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Corohmni

South Africa . 195 parts In-Stock

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$1.564

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$1.564

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Modulus Dynamics

Lithuania . 18,453 parts In-Stock

1+ parts

$1.967

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$1.888

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$1.810

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18,453

$1.967

$1.888

$1.810

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Andel Nordic

Denmark . 216 parts In-Stock

1+ parts

$32.020

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$22.415

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$22.415

216

$32.020

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$22.415

Eastek

USA . 3,186,000 parts In-Stock

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Perfect Parts

USA . 306,667 parts In-Stock

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RC Electronics

USA . 139,743 parts In-Stock

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$0.100

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$0.090

139,743

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$0.090

$0.090

Epart123

USA . 15,000 parts In-Stock

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$1.080

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Lixinc

USA . 11,936 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Robosynatics

Brazil . 7,775 parts In-Stock

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$1.136

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$1.113

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$1.113

7,775

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$1.136

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$1.113

Lucentia Tech

USA . 7,775 parts In-Stock

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$1.136

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$1.113

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$1.113

7,775

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$1.113

Authorized Procurement Solutions

USA . 2,400 parts In-Stock

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Overview

Enhance your electronic projects with the BCV47E6327HTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon guarantees top-notch quality and reliability. This small signal bipolar junction transistor (BJT) in NPN polarity configuration is perfect for applications requiring high DC current gain and a maximum collector-emitter voltage of 60V. With a Darlington configuration and surface-mount capability, this transistor offers exceptional performance in a compact package. Trust Infineon to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and have high efficiency with low noise, making them a popular choice in amplification circuits.

Configuration: DARLINGTON

Darlington configuration provides high current gain, allowing for small input currents to control larger output currents.

Surface Mount: YES

Surface mount package makes it easy to integrate into modern electronic circuit designs while saving space and improving reliability.

Maximum Power Dissipation: 0.36 W

With a relatively high power dissipation capacity, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, making it suitable for use in various environments.

Maximum Collector-Emitter Voltage: 60 V

Allows for higher voltage operation, making this transistor suitable for a wide range of applications.

Nominal Transition Frequency: 170 MHz

Higher transition frequency enables faster switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV47E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCV47E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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