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MPSA14RLRAG

Onsemi

MPSA14RLRAG by Onsemi

MPSA14RLRAG by Onsemi is a NPN Darlington BJT with hFE of 20000, VCEO of 30V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency response in a cylindrical package with through-hole terminals.

Median Price

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Chip Stock

USA . 72,500 parts In-Stock

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Sensible Micro Corp

USA . 5,900 parts In-Stock

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R&J Components

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Vyrian

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Bristol Electronics

USA . 2,100 parts In-Stock

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Atlantic Semiconductor

USA . 2,100 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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ComSIT USA

USA . 2,000 parts In-Stock

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Digiode

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Connector Distribution Corp

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500

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Right Parts Inc.

USA . 500 parts In-Stock

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500

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Nova Conductors

Japan . 300 parts In-Stock

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300

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LIBRA Elektronik GmbH

Germany . 88 parts In-Stock

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AZTECH Wire

Italy . 652 parts In-Stock

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$9.829

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Ampacity Inc.

Singapore . 383 parts In-Stock

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$51.050

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Perfect Parts

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Lixinc

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Continental Prestige Electronics

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SupplyDigital Components

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Problanco Electronics

Mexico . 6,267 parts In-Stock

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Germany . 1,800 parts In-Stock

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TANS Electronics

Latvia . 1,618 parts In-Stock

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Aranea Global

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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Corphita

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South Africa . 445 parts In-Stock

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Overview

Unlock the power of technology with the MPSA14RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor in a DARLINGTON configuration is perfect for amplifier applications. With a DC current gain of 20000 and a maximum operating temperature of 150°C, this product offers exceptional performance and reliability. Trust Onsemi to deliver cutting-edge technology that meets your needs. Elevate your projects with the MPSA14RLRAG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into most circuit designs, increasing versatility.

Configuration: DARLINGTON

Darlington configuration provides high current gain and excellent performance in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance and reliability.

Package Shape: ROUND

The round shape allows for easy mounting and positioning in tight spaces or on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connection simple and reliable during installation.

No. of Terminals: 3

Three terminals provide multiple connection points, enhancing adaptability and functionality in circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances heat dissipation and reduces the risk of overheating.

Minimum DC Current Gain (hFE): 20000

High minimum DC current gain ensures efficient signal amplification and consistent performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature, the transistor can withstand demanding environments without overheating.

Maximum Collector-Emitter Voltage: 30 V

The high maximum voltage rating ensures the transistor can handle varying voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon material provides excellent thermal conductivity and reliability for long-term use.

Maximum Collector Current (IC): 0.5 A

With a high collector current rating, the transistor can handle increased current loads without issue.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish ensures reliable connections and minimal resistance for optimal performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and allows for easy connection to circuit boards.

Maximum Time At Peak Reflow Temperature (s): 40

The product can withstand peak reflow temperatures for extended periods during assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can endure soldering processes without damage.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency allows for fast switching speeds and efficient signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA14RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA14RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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