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MPSA13RLRAG

Onsemi

MPSA13RLRAG by Onsemi

MPSA13RLRAG by Onsemi is a NPN Darlington transistor with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 10k and can handle up to 1.5W power dissipation. With a max operating temperature of 150°C and collector-emitter voltage of 30V, it is suitable for various electronic circuits requiring high gain and power handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NexGen Digital

USA . 82,000 parts In-Stock

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82,000

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Chip Stock

USA . 65,000 parts In-Stock

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65,000

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Vyrian

USA . 5,594 parts In-Stock

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5,594

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Digiode

USA . 1,233 parts In-Stock

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Nova Conductors

Japan . 66 parts In-Stock

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66

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Distributors (Availability)

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AZTECH Wire

Italy . 364 parts In-Stock

1+ parts

$18.348

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364

$18.348

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Ampacity Inc.

Singapore . 962 parts In-Stock

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$36.050

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962

$36.050

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Perfect Parts

USA . 36,678 parts In-Stock

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36,678

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Kepictronics

USA . 26,000 parts In-Stock

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26,000

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Continental Prestige Electronics

USA . 6,436 parts In-Stock

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6,436

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TANS Electronics

Latvia . 6,188 parts In-Stock

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6,188

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Argo Parts USA

USA . 4,698 parts In-Stock

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4,698

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SupplyDigital Components

Austria . 1,601 parts In-Stock

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Problanco Electronics

Mexico . 1,548 parts In-Stock

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1,548

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Kulean Microsystems

USA . 1,084 parts In-Stock

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UHIMA Technologies

Türkiye . 607 parts In-Stock

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607

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Corohmni

South Africa . 410 parts In-Stock

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410

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Corphita

USA . 143 parts In-Stock

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143

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Elevate your electronic projects with the MPSA13RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by the reputable Onsemi brand, this NPN Darlington transistor is perfect for amplifier applications. With a high DC current gain and maximum power dissipation of 1.5W, this transistor offers unparalleled value and performance. Whether you're a DIY enthusiast or a professional technician, the MPSA13RLRAG will take your projects to the next level with its reliability and versatility. Choose Onsemi for superior quality and trust in the best components for your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and moisture resistance, making it suitable for various environments.

Polarity or Channel Type: NPN

Offers high efficiency and reliability in amplification applications.

Configuration: DARLINGTON

Increases the current gain and minimizes the input current required for switching purposes.

Transistor Application: AMPLIFIER

Ideal for amplifying weak signals in audio and radio frequency circuits.

Package Shape: ROUND

Facilitates easy installation and board layout due to its compact and uniform shape.

Terminal Form: THROUGH-HOLE

Simplifies hand-soldering and provides a secure electrical connection.

No. of Terminals: 3

Offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 1.5 W

Handles high power levels efficiently for reliable performance in demanding applications.

Package Style (Meter): CYLINDRICAL

Provides a standardized form factor for easy compatibility with existing designs.

Minimum DC Current Gain (hFE): 10000

Ensures consistent and high amplification levels for optimal signal processing.

Maximum Operating Temperature: 150 °C

Allows operation in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low-voltage applications where precision and stability are critical.

Transistor Element Material: SILICON

Offers excellent conductivity and reliability for long-term operation.

Maximum Collector Current (IC): 0.5 A

Supports moderate current loads for versatile electronic circuit designs.

Terminal Finish: TIN SILVER COPPER

Provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: BOTTOM

Facilitates easy placement and soldering on the circuit board.

Peak Reflow Temperature °C: 260

Allows for high-temperature soldering processes without damaging the transistor.

Nominal Transition Frequency (fT): 125 MHz

Enables high-speed signal processing and wide bandwidth applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA13RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA13RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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