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MPSA64RLRAG

Onsemi

MPSA64RLRAG by Onsemi

MPSA64RLRAG by Onsemi is a PNP BJT with 30V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for switching applications, it features a high DC current gain of 20k hFE and operates up to 150 °C. Its Darlington configuration makes it suitable for various electronic designs requiring reliable performance in through-hole packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 25,000 parts In-Stock

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Vyrian

USA . 5,630 parts In-Stock

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Bristol Electronics

USA . 2,960 parts In-Stock

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Atlantic Semiconductor

USA . 2,960 parts In-Stock

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Digiode

USA . 928 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 535 parts In-Stock

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$12.290

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535

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TANS Electronics

Latvia . 8,065 parts In-Stock

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Problanco Electronics

Mexico . 7,915 parts In-Stock

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Kulean Microsystems

USA . 6,728 parts In-Stock

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SupplyDigital Components

Austria . 3,547 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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UHIMA Technologies

Türkiye . 416 parts In-Stock

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Corphita

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Overview

Discover the superior quality and reliability of the MPSA64RLRAG by Onsemi, a leading manufacturer in the industry. This small signal bipolar junction transistor (BJT) offers exceptional performance and durability for various applications such as switching circuits. With a high DC current gain and maximum power dissipation, this product delivers unmatched value and benefits to customers seeking efficient and reliable solutions. Upgrade your electronic projects with the MPSA64RLRAG and experience the advantages of top-notch technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs and configurations.

Configuration: DARLINGTON

Enhances the current gain of the transistor, making it ideal for switching applications.

Transistor Application: SWITCHING

Specifically designed for high-speed switching applications, ensuring efficient performance.

Maximum Power Dissipation (Abs): 1.5 W

Withstands high power dissipation, enabling the transistor to handle increased loads without overheating.

Maximum Collector-Emitter Voltage: 30 V

Supports higher voltage applications, expanding the range of possible uses for the transistor.

Minimum DC Current Gain (hFE): 20000

High DC current gain ensures reliable amplification of input signals, enhancing overall performance.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various circuit requirements.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency enables fast switching speeds, improving efficiency in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA64RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA64RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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