Loading...

2N6426RLRAG

Onsemi

2N6426RLRAG by Onsemi

2N6426RLRAG by Onsemi is a NPN Darlington transistor with max. collector-emitter voltage of 40V and max. collector current of 0.5A. It has a min. DC current gain of 20,000 and nominal transition frequency of 125MHz, making it ideal for amplifier applications due to its high power dissipation capability of 0.625W.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 4,000 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

-

10k+ parts

$0.200

4,000

$1.000

-

-

$0.200

Chip Stock

USA . 9,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,310

-

-

-

-

Vyrian

USA . 5,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,315

-

-

-

-

Digiode

USA . 217 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

217

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 149 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$1.000

-

-

-

AZTECH Wire

Italy . 90 parts In-Stock

1+ parts

$10.380

100+ parts

-

1k+ parts

-

10k+ parts

-

90

$10.380

-

-

-

Perfect Parts

USA . 12,564 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,564

-

-

-

-

SupplyDigital Components

Austria . 8,088 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,088

-

-

-

-

Kulean Microsystems

USA . 6,685 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,685

-

-

-

-

Problanco Electronics

Mexico . 4,492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,492

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,346

-

-

-

-

Glotronic Ltd.

UK . 1,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,970

-

-

-

-

TANS Electronics

Latvia . 1,528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,528

-

-

-

-

Northwest PG Solutions

USA . 745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

745

-

-

-

-

Native Components

USA . 727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

727

-

-

-

-

Corphita

USA . 394 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

394

-

-

-

-

UHIMA Technologies

Türkiye . 345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

345

-

-

-

-

Overview

Enhance your amplifier with the 2N6426RLRAG by Onsemi, a high-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor features a Darlington configuration ideal for amplifier applications. With a maximum operating temperature of 150 °C and a transition frequency of 125 MHz, this transistor delivers outstanding power dissipation and current gain. Upgrade your projects with the 2N6426RLRAG and experience superior amplification capabilities like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making this transistor ideal for applications requiring high amplification.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 20000

A high DC current gain indicates good amplification capability and sensitivity in circuits, making this transistor a reliable choice for amplifier applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures that this transistor can operate reliably in a variety of environments without overheating.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage requirements.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in amplifier circuits.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency indicates that this transistor can operate at high frequencies, making it suitable for amplifier circuits with wide bandwidth requirements.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6426RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6426RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20