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2N6426RLRP

Onsemi

2N6426RLRP by Onsemi

2N6426RLRP by Onsemi is a NPN Darlington BJT with hFE of 20k, VCE of 40V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,247 parts In-Stock

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Digiode

USA . 2,099 parts In-Stock

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Anansix

USA . 645 parts In-Stock

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Northwest PG Solutions

USA . 1,087 parts In-Stock

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$3.073

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SupplyDigital Components

Austria . 7,377 parts In-Stock

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Problanco Electronics

Mexico . 6,207 parts In-Stock

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Kulean Microsystems

USA . 2,452 parts In-Stock

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Corphita

USA . 2,010 parts In-Stock

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TANS Electronics

Latvia . 1,772 parts In-Stock

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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Native Components

USA . 389 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2N6426RLRP small signal bipolar junction transistor. Manufactured by industry leader Onsemi, this NPN Darlington transistor offers unparalleled performance and reliability. Ideal for a variety of applications, this product is designed to deliver exceptional quality and value. Whether you are a seasoned professional or a hobbyist, the 2N6426RLRP provides the perfect blend of efficiency and effectiveness, making it the ultimate choice for all your electronic projects. Elevate your creations with Onsemi's cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and helps in reducing the overall weight of the transistor, making it suitable for compact electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile and widely applicable in various electronic circuits.

Configuration: DARLINGTON

The Darlington configuration offers high current gain and low saturation voltage, making this transistor suitable for applications requiring high power amplification.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it reliable in demanding environments.

Maximum Collector-Emitter Voltage: 40 V

The 40V maximum collector-emitter voltage rating allows for safe operation in circuits with varying voltage levels, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor is capable of handling moderate current levels, suitable for a wide range of low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6426RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N6426RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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