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2N6427ZL1

Onsemi

2N6427ZL1 by Onsemi

2N6427ZL1 by Onsemi is a NPN Darlington BJT with hFE of 14000, VCE of 40V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Operating up to 150 °C, it suits various small signal tasks in electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,975 parts In-Stock

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Digiode

USA . 1,665 parts In-Stock

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1,665

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Distributors (Availability)

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Native Components

USA . 590 parts In-Stock

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$14.985

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590

$14.985

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Northwest PG Solutions

USA . 1,780 parts In-Stock

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$16.484

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$14.835

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$16.484

$14.835

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Kulean Microsystems

USA . 6,056 parts In-Stock

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6,056

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Problanco Electronics

Mexico . 4,213 parts In-Stock

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4,213

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TANS Electronics

Latvia . 2,477 parts In-Stock

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2,477

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SupplyDigital Components

Austria . 1,170 parts In-Stock

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Corphita

USA . 613 parts In-Stock

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UHIMA Technologies

Türkiye . 488 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Unleash the power of innovation with the 2N6427ZL1 by Onsemi, a high-quality Darlington NPN transistor that is perfect for small signal applications. Manufactured by Onsemi, a trusted name in the industry known for their superior products, this transistor offers unmatched reliability and performance. Whether you're working on amplifiers, switches, or voltage regulators, this transistor's high DC current gain and low collector-emitter voltage make it an essential component for your projects. Upgrade your designs today with the 2N6427ZL1 and experience the difference of top-notch quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, making it versatile for various applications.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, ideal for applications requiring high power amplification.

Package Shape: ROUND

Allows for easy mounting and installation in circular spaces.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto a PCB or other electronic circuits.

Minimum DC Current Gain (hFE): 14000

High current gain ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can operate reliably in high temperature environments, suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 40 V

Allows for use in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Provides high efficiency and reliability in amplification applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current loads, suitable for low to medium power applications.

Terminal Finish: TIN LEAD

Provides a reliable and durable connection for effective circuit performance.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6427ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

14000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N6427ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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