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2N6462

Texas Instruments

2N6462 by Texas Instruments

2N6462 by Texas Instruments is a NPN BJT transistor with 300V VCEO, 0.1A IC, and 70MHz fT. Ideal for switching applications due to its 1W Ptot, it has a hFE of 20 and operates up to 200°C. The package style is cylindrical with a metal body and wire terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,646 parts In-Stock

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4,646

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Digiode

USA . 3,283 parts In-Stock

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PUI

USA . 114 parts In-Stock

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114

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Distributors (Availability)

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Native Components

USA . 243 parts In-Stock

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$0.362

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$0.347

243

$0.362

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Northwest PG Solutions

USA . 343 parts In-Stock

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$0.398

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$0.351

343

$0.398

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$0.351

Parana Technologies

USA . 1,480 parts In-Stock

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$1.541

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$2.192

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1,480

$1.541

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$2.192

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DigiPath Technology Company

USA . 651 parts In-Stock

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$1.696

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$1.561

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651

$1.696

$1.561

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ChromeModa Solutions

Germany . 2,198 parts In-Stock

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$1.731

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$1.419

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$1.731

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IDEA Electronic Components Group

UK . 161 parts In-Stock

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$1.731

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$1.558

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One Stop Electronics

USA . 150 parts In-Stock

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$11.050

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$11.050

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Semicontronic

India . 1,079 parts In-Stock

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$12.050

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$11.749

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$11.688

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AZTECH Wire

Italy . 342 parts In-Stock

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$13.336

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Ampacity Inc.

Singapore . 879 parts In-Stock

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$35.050

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Corphita

USA . 4,014 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Looking for a reliable and high-quality solution for your switching applications? Look no further than the Texas Instruments 2N6462 Small Signal Bipolar Junction Transistor. With a maximum collector-emitter voltage of 300V and a minimum DC current gain of 20, this NPN transistor is perfect for a wide range of switching tasks. Whether you're designing circuits for industrial automation, telecommunications, or consumer electronics, the 2N6462 offers the performance and reliability you need. Trust Texas Instruments, a leader in semiconductor manufacturing, to deliver innovative solutions that exceed your expectations. Choose the 2N6462 for unbeatable value and unparalleled benefits in your next project.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides better heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Single configuration transistors are easy to use and control, making them ideal for a variety of circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C allows this transistor to be used in a wide range of industrial and automotive applications.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating of 300V makes this transistor suitable for high voltage circuit designs.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor provides consistent amplification in a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows this transistor to handle moderate current levels in switching applications.

Nominal Transition Frequency (fT): 70 MHz

The high nominal transition frequency of 70MHz indicates fast response times and high frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6462 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6462 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-869-2919, 5961008692919

NIIN

008692919

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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