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2N6426RL1

Onsemi

2N6426RL1 by Onsemi

2N6426RL1 by Onsemi is a NPN Darlington BJT with hFE of 20k, VCE of 40V, and IC of 0.5A. Ideal for applications requiring high current gain such as amplifiers and switches due to its high DC current gain. The package style is cylindrical with through-hole terminals made of silicon material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,087 parts In-Stock

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Vyrian

USA . 1,873 parts In-Stock

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Native Components

USA . 235 parts In-Stock

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$6.462

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Kulean Microsystems

USA . 3,913 parts In-Stock

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SupplyDigital Components

Austria . 3,401 parts In-Stock

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TANS Electronics

Latvia . 3,113 parts In-Stock

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Corphita

USA . 2,261 parts In-Stock

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Northwest PG Solutions

USA . 1,487 parts In-Stock

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Problanco Electronics

Mexico . 1,213 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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UHIMA Technologies

Türkiye . 274 parts In-Stock

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Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance? Look no further than the 2N6426RL1 by Onsemi. With its NPN polarity and Darlington configuration, this transistor offers reliability and efficiency in various applications. From amplifiers to switches, this product is a versatile solution that provides value and benefits to customers. Trust Onsemi's reputation for excellence and innovation, and experience the advantages of the 2N6426RL1 in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making this transistor ideal for applications requiring high amplification.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic circuits.

Minimum DC Current Gain (hFE): 20000

High DC current gain ensures efficient amplification and signal processing in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications that require a moderate collector-emitter voltage, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics such as high gain, low noise, and stability, making this transistor a reliable choice for various applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads in electronic circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable electrical connections in circuit applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure mounting on PCBs, ensuring stable connections and space-saving design.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6426RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N6426RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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