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2N6426

Onsemi

2N6426 by Onsemi

2N6426 by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency capabilities in a cylindrical package.

Median Price

$0.480

Lifecycle Status

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Verical

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DF Sales Co.

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Component Electronics Inc.

Canada . 40 parts In-Stock

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Ace Electronics

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American Microsemiconductor Inc.

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Semi Source

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Tech-Mark Corp

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A2Z Electronics, Inc.

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Fibra_Brandt Electronic GMBH

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Corohmni

South Africa . 56 parts In-Stock

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Native Components

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Northwest PG Solutions

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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RTC Component Inc.

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Overview

Power up your amplifiers with the 2N6426 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance. Designed for durability and reliability, this NPN Darlington transistor is perfect for amplifier applications. With a maximum operating temperature of 150 °C and a minimum DC current gain of 20000, the 2N6426 offers unmatched value and efficiency. Trust Onsemi's reputation for excellence and experience the benefits of this powerful transistor in your electronic projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and is ideal for applications requiring high amplification.

Maximum Power Dissipation: 0.625 W

With a relatively high power dissipation, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, improving product durability.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating makes this transistor suitable for applications with higher voltages.

Minimum DC Current Gain (hFE): 20000

The high DC current gain ensures efficient amplification and performance in amplifier circuits.

Nominal Transition Frequency (fT): 125 MHz

The high transition frequency indicates fast switching times and high-frequency performance, making this transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6426 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6426 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-068-2717, 5961010682717

NIIN

010682717

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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