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2N6427

Onsemi

2N6427 by Onsemi

2N6427 by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 14000, and fT of 130MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.

Median Price

$0.271

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

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Adafruit Industries

USA . 100 parts In-Stock

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$0.489

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$0.484

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Rochester

USA . 14 parts In-Stock

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$0.053

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$0.044

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$0.039

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Digiode

USA . 3,838 parts In-Stock

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Freelance Electronics

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Component Electronics Inc.

Canada . 8,838 parts In-Stock

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TEDSS.com

USA . 177,976 parts In-Stock

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NAC Semi

USA . 199 parts In-Stock

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American Microsemiconductor Inc.

USA . 459 parts In-Stock

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A2Z Electronics, Inc.

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Bristol Electronics

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Lantek

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ACDS - Activité Composants Distribution Service

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Electronic Expediters

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Vyrian

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Anansix

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PC Components Company LLC

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Semtec, LLC

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Mil-Aero Solutions, Inc.

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ES Components

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ComSIT Distribution GmbH

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Prism Electronics

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NexGen Digital

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Corel Iberica Componentes, S.L.

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DF Sales Co.

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DF Sales Co.

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MISTER SPROCKETS

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Manotoh

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Resion

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J2 Sourcing AB

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Cyclops Electronics Ltd

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LittleDiode

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Corphita

USA . 7,372 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.489

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$0.484

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$0.464

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Component Stockers USA

USA . 764 parts In-Stock

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$99.990

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Northwest PG Solutions

USA . 2,711 parts In-Stock

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Metaverse IC Inc.

Canada . 11,929 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

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TANS Electronics

Latvia . 7,927 parts In-Stock

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Problanco Electronics

Mexico . 7,659 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,031 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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GreenTree Electronics

Israel . 7,000 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 5,697 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

UK . 3,464 parts In-Stock

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Assy Fe

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RTC Component Inc.

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Native Components

USA . 1,646 parts In-Stock

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 949 parts In-Stock

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Supply Digital

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Overview

Enhance your electronic projects with the 2N6427 by Onsemi, a high-quality NPN Darlington transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted industry leader, this small signal bipolar junction transistor is ideal for a wide range of applications, providing customers with exceptional value and versatility. Whether you're a hobbyist or a professional, the 2N6427 delivers impressive power dissipation, high DC current gain, and a maximum collector-emitter voltage of 40V, making it the perfect choice for your next project. Trust Onsemi's expertise and elevate your work with the 2N6427 transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy provide excellent insulation properties, making the transistor more reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile in various electronic applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain, allowing for strong amplification of weak signals.

Package Shape: ROUND

Round shape makes it easier to mount and provides better thermal management in circuits.

Maximum Power Dissipation: 0.625 W

High power dissipation capability ensures that the transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 40 V

Allows for voltage handling capabilities in circuits without risking damage to the transistor.

Maximum Collector Current: 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in circuits.

Nominal Transition Frequency: 130 MHz

High cut-off frequency allows for efficient switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6427 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

14000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6427 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-185-4252, 5961011854252, 5961-01-129-4167, 5961011294167

NIIN

011854252, 011294167

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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