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2N6427RLRP

Onsemi

2N6427RLRP by Onsemi

2N6427RLRP by Onsemi is a NPN Darlington BJT with hFE of 14000, VCE of 40V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Operating up to 150 °C, it suits various electronic designs needing reliable bipolar transistors.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,658 parts In-Stock

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2,658

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Anansix

USA . 2,543 parts In-Stock

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2,543

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Vyrian

USA . 204 parts In-Stock

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204

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Distributors (Availability)

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Native Components

USA . 334 parts In-Stock

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$0.087

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$0.084

334

$0.087

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$0.084

Northwest PG Solutions

USA . 1,707 parts In-Stock

1+ parts

$0.096

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$0.085

1,707

$0.096

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$0.085

SupplyDigital Components

Austria . 7,780 parts In-Stock

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7,780

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Problanco Electronics

Mexico . 5,116 parts In-Stock

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5,116

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Kulean Microsystems

USA . 2,286 parts In-Stock

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2,286

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Corphita

USA . 1,725 parts In-Stock

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1,725

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TANS Electronics

Latvia . 1,720 parts In-Stock

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1,720

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UHIMA Technologies

Türkiye . 850 parts In-Stock

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850

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Corohmni

South Africa . 84 parts In-Stock

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Overview

Elevate your electronic projects with the 2N6427RLRP by Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) boasts a NPN polarity and DARLINGTON configuration for exceptional performance. Whether you're a DIY enthusiast or a seasoned professional, this transistor is perfect for a wide range of applications. With a high DC current gain of 14000 and maximum collector-emitter voltage of 40V, this product guarantees reliability and efficiency. Trust Onsemi for quality components that deliver value and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Common and versatile type of transistor that allows for easy integration into circuits.

Configuration: DARLINGTON

High current gain due to the Darlington configuration, making it suitable for applications requiring high amplification.

Package Shape: ROUND

Compact and space-saving design for easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Easily soldered onto circuit boards and provides secure connections.

No. of Terminals: 3

Simplifies circuit design and reduces complexity.

Package Style (Meter): CYLINDRICAL

Durable and compact design for easy handling and assembly.

Minimum DC Current Gain (hFE): 14000

High gain ensures accurate amplification of signals in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications where precision is required.

Transistor Element Material: SILICON

Reliable and widely-used material for transistors, ensuring long-term performance.

Maximum Collector Current (IC): 0.5 A

Able to handle high currents, making it suitable for a variety of applications.

Terminal Finish: TIN LEAD

Provides reliable electrical connections and prevents corrosion.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering onto circuit boards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6427RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

14000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N6427RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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