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2N6426RLRA

Onsemi

2N6426RLRA by Onsemi

2N6426RLRA by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities in a cylindrical package.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 184,795 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

184,795

-

$0.079

$0.066

$0.059

DigiKey

USA . 184,795 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.100

184,795

-

-

-

$0.100

Verical

USA . 184,795 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

184,795

-

-

-

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 129 parts In-Stock

1+ parts

$0.062

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-

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129

$0.062

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Vyrian

USA . 1,156 parts In-Stock

1+ parts

$0.065

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1,156

$0.065

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DigiKey Marketplace

USA . 358,994 parts In-Stock

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358,994

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 879 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

879

$0.040

-

-

$0.038

Corphita

USA . 545 parts In-Stock

1+ parts

$0.058

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-

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545

$0.058

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Corohmni

South Africa . 469 parts In-Stock

1+ parts

$0.065

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-

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469

$0.065

-

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Component Stockers USA

USA . 498,357 parts In-Stock

1+ parts

$0.070

100+ parts

$0.060

1k+ parts

$0.060

10k+ parts

$0.060

498,357

$0.070

$0.060

$0.060

$0.060

Continental Prestige Electronics

USA . 358,994 parts In-Stock

1+ parts

-

100+ parts

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$0.062

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358,994

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-

$0.062

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Problanco Electronics

Mexico . 7,023 parts In-Stock

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7,023

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TANS Electronics

Latvia . 5,785 parts In-Stock

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Kulean Microsystems

USA . 3,291 parts In-Stock

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3,291

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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SupplyDigital Components

Austria . 2,758 parts In-Stock

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2,758

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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465

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Northwest PG Solutions

USA . 332 parts In-Stock

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332

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Overview

Elevate your electronics projects with the 2N6426RLRA Small Signal Bipolar Junction Transistor from Onsemi. Manufactured by a trusted industry leader, this NPN Darlington transistor offers high-quality performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 20000, this transistor provides exceptional value and benefits to customers seeking precision and efficiency in their designs. Upgrade your circuits today with the superior capabilities of the 2N6426RLRA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the transistor easy to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, ensuring compatibility with a wide range of applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making the transistor suitable for high power amplification tasks.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Maximum Power Dissipation: 0.625 W

With a high power dissipation rating, this transistor can handle relatively high power levels without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 20000

High DC current gain ensures efficient signal amplification, making it an excellent choice for low-level signal processing applications.

Maximum Collector-Emitter Voltage: 40 V

This voltage rating allows the transistor to handle relatively high voltage levels, making it suitable for a variety of amplifier circuits.

Maximum Collector Current (IC): 0.5 A

With a high collector current rating, this transistor can handle significant current loads, making it ideal for power amplification tasks.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency ensures fast signal processing, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6426RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6426RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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