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2N6427RLRM

Onsemi

2N6427RLRM by Onsemi

2N6427RLRM by Onsemi is a NPN Darlington BJT with hFE of 14000, VCE of 40V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Operating up to 150 °C, it suits various electronic designs needing reliable bipolar transistors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,325 parts In-Stock

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Digiode

USA . 1,813 parts In-Stock

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1,813

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Distributors (Availability)

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Native Components

USA . 481 parts In-Stock

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$45.050

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$43.248

481

$45.050

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$43.248

Northwest PG Solutions

USA . 1,445 parts In-Stock

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$49.555

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1,445

$49.555

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Problanco Electronics

Mexico . 7,961 parts In-Stock

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7,961

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TANS Electronics

Latvia . 3,848 parts In-Stock

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3,848

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Corphita

USA . 2,464 parts In-Stock

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2,464

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Kulean Microsystems

USA . 1,829 parts In-Stock

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1,829

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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651

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SupplyDigital Components

Austria . 465 parts In-Stock

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Corohmni

South Africa . 290 parts In-Stock

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Overview

Discover the power of the 2N6427RLRM by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this NPN Darlington transistor is perfect for a wide range of applications. With a minimum DC Current Gain of 14000 and a maximum Collector-Emitter Voltage of 40V, this transistor delivers unmatched value and benefits to customers seeking superior electronic components. Upgrade your projects with the 2N6427RLRM and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making this transistor suitable for high-power applications.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for the transistor, ensuring reliability in circuit designs.

No. of Terminals: 3

Three terminals allow for easy integration into circuit boards and simplify circuit design.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is widely used and compatible with standard component mounting techniques.

Minimum DC Current Gain (hFE): 14000

High minimum DC current gain ensures stable and consistent performance in amplification circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating provides versatility for different voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor, making it suitable for various applications.

Maximum Collector Current (IC): 0.5 A

High maximum collector current rating allows for handling of high current loads in circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and electrical conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and integration into circuit boards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6427RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

14000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N6427RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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