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2N6427RLRA

Onsemi

2N6427RLRA by Onsemi

2N6427RLRA by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 14000, and fT of 130MHz. Ideal for applications requiring high current gain and frequency response in environments up to 150 °C, such as amplifiers and switching circuits.

Median Price

$0.500

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 235 parts In-Stock

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$0.500

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$0.200

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Vyrian

USA . 2,002 parts In-Stock

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Digiode

USA . 156 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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$0.500

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412

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Northwest PG Solutions

USA . 871 parts In-Stock

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$2.395

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871

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QUARKTWIN TECHNOLOGY LTD

USA . 10,264 parts In-Stock

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SupplyDigital Components

Austria . 7,452 parts In-Stock

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Kulean Microsystems

USA . 5,174 parts In-Stock

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Problanco Electronics

Mexico . 4,701 parts In-Stock

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TANS Electronics

Latvia . 2,920 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

USA . 521 parts In-Stock

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521

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Native Components

USA . 85 parts In-Stock

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85

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Enhance your electronic projects with the reliable 2N6427RLRA small signal bipolar junction transistor from Onsemi. Known for their top-notch quality and performance, Onsemi's products are trusted by professionals worldwide. This NPN Darlington transistor is perfect for a wide range of applications, delivering high power dissipation and a high DC current gain. With its durable plastic/epoxy package and impressive specifications, this transistor offers exceptional value and benefits to customers looking for a dependable component for their designs. Upgrade your circuits with the 2N6427RLRA and experience the superior performance that Onsemi is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for use in applications that require high power handling capabilities.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 14000

High DC current gain ensures efficient amplification and signal control in circuits, making this transistor a reliable choice for various applications.

Maximum Collector-Emitter Voltage: 40 V

This voltage rating allows for safe operation within specified limits, ensuring reliable performance in different circuit configurations.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels, making it suitable for various applications.

Nominal Transition Frequency (fT): 130 MHz

The relatively high transition frequency allows for reliable signal processing and amplification in high-frequency applications, making this transistor a good choice for RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6427RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

14000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6427RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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