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2N6426G

Onsemi

2N6426G by Onsemi

2N6426G by Onsemi is a NPN Darlington BJT with max. power dissipation of 1.5W, hFE of 20000, and VCE of 40V. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 38 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

38

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$0.185

$0.153

$0.137

Distributors (In-Stock)

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Digiode

USA . 934 parts In-Stock

1+ parts

$0.144

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934

$0.144

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Chip Stock

USA . 31,000 parts In-Stock

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Vyrian

USA . 7,655 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,635 parts In-Stock

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$0.137

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$0.137

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Corohmni

South Africa . 217 parts In-Stock

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$0.142

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$0.142

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AZTECH Wire

Italy . 502 parts In-Stock

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$9.080

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$9.080

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Native Components

USA . 654 parts In-Stock

1+ parts

$5,401.720

100+ parts

$5,293.686

1k+ parts

$5,239.669

10k+ parts

$5,185.651

654

$5,401.720

$5,293.686

$5,239.669

$5,185.651

Northwest PG Solutions

USA . 1,136 parts In-Stock

1+ parts

$5,941.892

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Perfect Parts

USA . 12,208 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,583 parts In-Stock

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Problanco Electronics

Mexico . 5,323 parts In-Stock

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SupplyDigital Components

Austria . 5,081 parts In-Stock

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TANS Electronics

Latvia . 4,899 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kulean Microsystems

USA . 1,189 parts In-Stock

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Continental Prestige Electronics

USA . 948 parts In-Stock

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$0.144

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Overview

Enhance your electronic projects with the reliable 2N6426G by Onsemi, a high-quality NPN Darlington transistor that delivers exceptional performance. Manufactured by Onsemi, a trusted leader in semiconductor technology, this small signal BJT offers superior power dissipation, high DC current gain, and a maximum collector-emitter voltage of 40V. Ideal for a wide range of applications, including amplification and switching circuits, this transistor provides customers with unmatched value, efficiency, and reliability. Upgrade your designs with the 2N6426G and experience the benefits of top-notch quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Commonly used type of transistor which allows for easy integration into various circuit designs.

Configuration: DARLINGTON

Offers high current gain and fast switching speeds, making it suitable for high power applications.

Package Shape: ROUND

Compact design that saves space and allows for easy mounting on circuit boards.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 20000

High current gain ensures efficient amplification of signals in circuits.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 40 V

Can withstand relatively high voltage levels, increasing the versatility of the transistor.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring optimal performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6426G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N6426G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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