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MMBT3906T-7-F

Diodes Incorporated

MMBT3906T-7-F by Diodes Incorporated

Diodes Inc. MMBT3906T-7-F is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and max operating temp of 150°C. Features GULL WING terminals, RECTANGULAR package shape, and SILICON transistor element material.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 290 parts In-Stock

1+ parts

$0.227

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$0.078

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$0.054

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290

$0.227

$0.078

$0.054

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DigiKey

USA . 78,955 parts In-Stock

1+ parts

$0.250

100+ parts

$0.097

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$0.062

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78,955

$0.250

$0.097

$0.062

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Mouser Electronics

USA . 33,881 parts In-Stock

1+ parts

$0.250

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$0.097

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$0.063

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$0.051

33,881

$0.250

$0.097

$0.063

$0.051

Verical

USA . 24,000 parts In-Stock

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Avnet

USA . 12,000 parts In-Stock

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$0.025

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$0.025

Element14

Singapore . 950 parts In-Stock

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$0.072

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$0.042

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$0.039

950

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$0.072

$0.042

$0.039

Farnell

UK . 950 parts In-Stock

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-

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$0.074

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$0.040

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$0.033

950

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$0.074

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$0.033

Arrow

USA . 81 parts In-Stock

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$0.061

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81

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Distributors (In-Stock)

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Nova Conductors

Japan . 550 parts In-Stock

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$0.053

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550

$0.053

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Maritex

Poland . 1,518 parts In-Stock

1+ parts

$0.078

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$0.042

1k+ parts

$0.033

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$0.025

1,518

$0.078

$0.042

$0.033

$0.025

TME

Poland . 2,505 parts In-Stock

1+ parts

$0.230

100+ parts

$0.090

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$0.052

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$0.039

2,505

$0.230

$0.090

$0.052

$0.039

Vyrian

USA . 317,281 parts In-Stock

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IBS Electronics

USA . 144,000 parts In-Stock

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$0.055

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$0.055

NAC Semi

USA . 78,000 parts In-Stock

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$0.095

78,000

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$0.095

Chip Stock

USA . 67,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 12,000 parts In-Stock

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ComSIT USA

USA . 12,000 parts In-Stock

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Bristol Electronics

USA . 4,136 parts In-Stock

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Sea View Technologies

USA . 3,398 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,440 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,440 parts In-Stock

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Electronics Depot

USA . 1,000 parts In-Stock

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Prism Electronics

USA . 971 parts In-Stock

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PC Components Company LLC

USA . 738 parts In-Stock

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Sensible Micro Corp

USA . 65 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 343,540 parts In-Stock

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$0.020

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343,540

$0.020

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Semicontronic

India . 339,851 parts In-Stock

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339,851

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Argo Parts USA

USA . 2,680 parts In-Stock

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$0.049

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$0.048

2,680

$0.049

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$0.048

Corohmni

South Africa . 304 parts In-Stock

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$0.055

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304

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.057

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$0.054

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200

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Modulus Dynamics

Lithuania . 300 parts In-Stock

1+ parts

$0.058

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$0.058

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$0.056

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300

$0.058

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Continental Prestige Electronics

USA . 2,065 parts In-Stock

1+ parts

$0.260

100+ parts

$0.103

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$0.044

10k+ parts

$0.028

2,065

$0.260

$0.103

$0.044

$0.028

Aztec Data Supply Inc.

USA . 4,587 parts In-Stock

1+ parts

$1.766

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$1.766

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Perfect Parts

USA . 179,692 parts In-Stock

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,859 parts In-Stock

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10,859

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QUARKTWIN TECHNOLOGY LTD

USA . 10,859 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.051

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$0.050

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$0.049

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$0.051

$0.050

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Robosynatics

Brazil . 1,124 parts In-Stock

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$0.054

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Lucentia Tech

USA . 1,124 parts In-Stock

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Lixinc

USA . 164 parts In-Stock

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Overview

Upgrade your electronic circuits with the high-quality MMBT3906T-7-F from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers reliable Small Signal Bipolar Junction Transistors (BJT) like no other. Perfect for various applications, this PNP transistor boasts a single configuration, GULL WING terminals, and a small outline package style. With a low VCEsat of 0.4V and a maximum collector-emitter voltage of 40V, this transistor ensures optimal performance and efficiency in your designs. Trust Diodes Incorporated to provide you with top-notch products that guarantee value and quality every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications, making this product suitable for such purposes.

Maximum VCEsat: 0.4 V

Low VCEsat indicates minimal voltage drop across the collector-emitter junction, leading to efficient power usage.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels, making it suitable for various low-power applications.

Minimum DC Current Gain (hFE): 30

A higher value of hFE ensures amplification of input signals with high stability and accuracy.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, increasing its versatility in different applications.

Nominal Transition Frequency (fT): 250 MHz

With a high transition frequency, the transistor can handle high-frequency signals, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT3906T-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.4 V

Trade Compliance

MMBT3906T-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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