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MPSA13ZL1G

Onsemi

MPSA13ZL1G by Onsemi

MPSA13ZL1G by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10000. It is commonly used as an amplifier in various applications.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

$0.090

100+ parts

$0.090

1k+ parts

$0.090

10k+ parts

-

2,000

$0.090

$0.090

$0.090

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 1,110 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

1,110

$0.770

$0.580

$0.500

-

Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Vyrian

USA . 2,765 parts In-Stock

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2,765

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Digiode

USA . 1,827 parts In-Stock

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1,827

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Corohmni

South Africa . 133 parts In-Stock

1+ parts

$0.770

100+ parts

-

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133

$0.770

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AZTECH Wire

Italy . 450 parts In-Stock

1+ parts

$9.441

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-

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450

$9.441

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Ampacity Inc.

Singapore . 690 parts In-Stock

1+ parts

$39.050

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690

$39.050

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Continental Prestige Electronics

USA . 6,992 parts In-Stock

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6,992

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Argo Parts USA

USA . 2,554 parts In-Stock

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2,554

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SupplyDigital Components

Austria . 1,848 parts In-Stock

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1,848

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Corphita

USA . 1,026 parts In-Stock

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1,026

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Kulean Microsystems

USA . 949 parts In-Stock

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949

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Problanco Electronics

Mexico . 726 parts In-Stock

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726

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TANS Electronics

Latvia . 133 parts In-Stock

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133

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UHIMA Technologies

Türkiye . 78 parts In-Stock

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78

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Discover the MPSA13ZL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN Darlington transistor is perfect for amplifier applications. With a maximum power dissipation of 1.5W and a minimum DC current gain of 10000, this product delivers outstanding results. Its durable plastic/epoxy package body material ensures longevity, while its through-hole terminal form makes installation a breeze. Experience the value and benefits of the MPSA13ZL1G in your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy packaging ensures durability and resistance to mechanical stress, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other components in electronic circuits, enhancing compatibility and versatility.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and minimized saturation voltage, making it efficient for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier usage, this transistor delivers excellent signal amplification, enabling high-quality audio and other amplified signals.

Package Shape: ROUND

The round package shape promotes space-saving installation and facilitates ease of mounting, making it convenient for applications with limited board space.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure and reliable connectivity when soldered onto a circuit board, improving overall stability and performance.

No. of Elements: 1

With a single element, this transistor simplifies circuit design, reducing complexity and potential points of failure.

No. of Terminals: 3

Featuring three terminals, this transistor offers straightforward connections for the base, collector, and emitter, simplifying integration into electronic circuits.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation of 1.5W allows for robust operation even under demanding conditions, providing long-term reliability and stability.

Package Style (Meter): CYLINDRICAL

The cylindrical package style ensures efficient heat dissipation, preventing thermal stress and prolonging the lifespan of the transistor.

Minimum DC Current Gain (hFE): 10000

With a minimum DC current gain of 10000, this transistor exhibits exceptional signal amplification capabilities, enabling precise and accurate amplification of weak signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C guarantees reliable performance even in elevated temperature environments, expanding the range of potential applications.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage of 30V allows for versatility in various circuit setups, ensuring compatibility with a wide range of voltage requirements.

Transistor Element Material: SILICON

The use of silicon as the transistor element material guarantees superior performance, low noise levels, and excellent temperature stability, making it an excellent choice for high-quality amplifier circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate power levels, rendering it suitable for various amplification needs.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish enhances conductivity and provides protection against oxidation, ensuring reliable electrical connections, particularly in harsh environments.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB layout, allowing for efficient positioning and optimized signal routing in electronic designs.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C enables compatibility with industry-standard soldering processes, ensuring easy and reliable integration onto PCBs.

Nominal Transition Frequency (fT): 125 MHz

With a nominal transition frequency of 125MHz, this transistor is capable of amplifying high-frequency signals accurately and efficiently, making it ideal for applications that require precise high-frequency response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA13ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA13ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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