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MPS6724G

Onsemi

MPS6724G by Onsemi

MPS6724G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers in electronic circuits.

Median Price

$0.222

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,533 parts In-Stock

1+ parts

$0.352

100+ parts

$0.035

1k+ parts

$0.022

10k+ parts

-

1,533

$0.352

$0.035

$0.022

-

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

3,000

-

$0.092

$0.077

$0.068

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,378 parts In-Stock

1+ parts

$0.072

100+ parts

-

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-

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2,378

$0.072

-

-

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Vyrian

USA . 4,569 parts In-Stock

1+ parts

-

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4,569

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 275 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

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275

$0.068

-

-

-

Corohmni

South Africa . 309 parts In-Stock

1+ parts

$0.076

100+ parts

-

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-

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-

309

$0.076

-

-

-

Component Stockers USA

USA . 3,144 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

-

3,144

$0.080

$0.070

$0.070

-

AZTECH Wire

Italy . 549 parts In-Stock

1+ parts

$9.900

100+ parts

-

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-

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549

$9.900

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QUARKTWIN TECHNOLOGY LTD

USA . 12,972 parts In-Stock

1+ parts

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12,972

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Perfect Parts

USA . 11,908 parts In-Stock

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11,908

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Problanco Electronics

Mexico . 7,719 parts In-Stock

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7,719

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Kulean Microsystems

USA . 5,423 parts In-Stock

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5,423

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SupplyDigital Components

Austria . 3,828 parts In-Stock

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3,828

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Authorized Procurement Solutions

USA . 1,733 parts In-Stock

1+ parts

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1,733

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GreenTree Electronics

Israel . 1,533 parts In-Stock

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1,533

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TANS Electronics

Latvia . 1,099 parts In-Stock

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1,099

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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710

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Overview

Upgrade your electronic projects with the MPS6724G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN Darlington transistor offers exceptional performance and reliability for a wide range of applications. With a maximum power dissipation of 1W and a minimum DC current gain of 4000, this transistor is perfect for amplification and switching tasks. Trust Onsemi for superior quality and trust the MPS6724G for unbeatable value and performance in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and thermal stability, ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used for amplifying and switching electronic signals, making it versatile for various applications.

Configuration: DARLINGTON

Offers high current gain and voltage gain, suitable for applications requiring high amplification.

Maximum Power Dissipation (Abs): 1 W

Can handle reasonable power levels without overheating, ensuring stable performance.

Maximum Collector-Emitter Voltage: 40 V

Provides a wide range of voltage handling capabilities for different circuit requirements.

Maximum Collector Current (IC): 1 A

Capable of handling high current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 100 MHz

Allows for high-speed switching, ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6724G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6724G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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