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MPSA27G

Onsemi

MPSA27G by Onsemi

MPSA27G by Onsemi is a NPN Darlington BJT transistor with hFE of 10000, Vce of 60V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 5,508 parts In-Stock

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Digiode

USA . 2,070 parts In-Stock

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Global Solutions Electronics Company

USA . 379 parts In-Stock

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Component Sense

UK . 118 parts In-Stock

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AZTECH Wire

Italy . 1,209 parts In-Stock

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$15.390

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Perfect Parts

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Kulean Microsystems

USA . 7,359 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,231 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 5,000 parts In-Stock

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Futuretech Components

Singapore . 4,980 parts In-Stock

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Problanco Electronics

Mexico . 3,538 parts In-Stock

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SupplyDigital Components

Austria . 1,910 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,398 parts In-Stock

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Corohmni

South Africa . 309 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your electronic projects with the MPSA27G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN Darlington transistor is ideal for amplifier applications. With a high DC current gain and a maximum operating temperature of 150 °C, this transistor provides excellent value and versatility for your designs. Upgrade your circuits today with the MPSA27G and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and helps in reducing the risk of electrical shorts, making the product safe and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: DARLINGTON

Darlington configuration offers high current gain and allows for efficient signal amplification, making this product suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this product can withstand challenging environmental conditions without compromising its performance.

Maximum Collector-Emitter Voltage: 60 V

Ability to handle high voltage levels makes this transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

With a high collector current rating, this transistor can handle significant loads, making it ideal for various applications.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency indicates that this transistor can operate at high frequencies, suitable for applications where fast switching speeds are required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA27G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA27G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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