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MPSA14RLRPG

Onsemi

MPSA14RLRPG by Onsemi

MPSA14RLRPG by Onsemi is a NPN Darlington BJT with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 20k and can handle up to 1.5W power dissipation. With a max operating temp of 150 °C and Vce of 30V, it's suitable for various electronic designs requiring high performance in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 15,000 parts In-Stock

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Vyrian

USA . 9,466 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

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4,000

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Holdelec - ElecDif-Pro

France . 4,000 parts In-Stock

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Elcom Components

USA . 2,000 parts In-Stock

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Digiode

USA . 1,649 parts In-Stock

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AZTECH Wire

Italy . 1,094 parts In-Stock

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$18.030

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Component Stockers USA

USA . 717 parts In-Stock

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$99.990

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717

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QUARKTWIN TECHNOLOGY LTD

USA . 17,541 parts In-Stock

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Kulean Microsystems

USA . 5,814 parts In-Stock

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SupplyDigital Components

Austria . 2,821 parts In-Stock

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Corphita

USA . 1,340 parts In-Stock

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UHIMA Technologies

Türkiye . 774 parts In-Stock

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Problanco Electronics

Mexico . 328 parts In-Stock

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TANS Electronics

Latvia . 318 parts In-Stock

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Corohmni

South Africa . 310 parts In-Stock

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Overview

Unleash the power of the MPSA14RLRPG by Onsemi, a top-quality small signal bipolar junction transistor designed for amplifiers. Manufactured with precision and expertise by Onsemi, this NPN darlington transistor offers peak performance and reliability. Ideal for a wide range of applications, this transistor provides customers with unparalleled value, efficiency, and reliability. Upgrade your electronics with the MPSA14RLRPG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer good performance characteristics.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making it ideal for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Maximum Power Dissipation (Abs): 1.5 W

Can handle high power dissipation, suitable for applications where power amplification is required.

Minimum DC Current Gain (hFE): 20000

High current gain ensures efficient signal amplification in various electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it reliable in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

Can handle high voltage levels, suitable for applications where voltage amplification is needed.

Maximum Collector Current (IC): 0.5 A

Able to handle high collector current, making it suitable for power amplification applications.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency allows for high-frequency signal amplification, ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA14RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA14RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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