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MPSA12RLRP

Onsemi

MPSA12RLRP by Onsemi

MPSA12RLRP by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or switching circuits due to its SILICON transistor element material and THROUGH-HOLE terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,916 parts In-Stock

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Digiode

USA . 2,165 parts In-Stock

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2,165

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AZTECH Wire

Italy . 1,205 parts In-Stock

1+ parts

$20.530

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1,205

$20.530

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TANS Electronics

Latvia . 6,666 parts In-Stock

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Kulean Microsystems

USA . 5,165 parts In-Stock

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SupplyDigital Components

Austria . 4,365 parts In-Stock

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Problanco Electronics

Mexico . 3,888 parts In-Stock

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3,888

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UHIMA Technologies

Türkiye . 978 parts In-Stock

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978

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Corphita

USA . 157 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality MPSA12RLRP small signal bipolar junction transistor from Onsemi. Manufactured by a trusted brand in the industry, this NPN Darlington transistor offers reliable performance and durability. Ideal for a variety of applications, this transistor is perfect for amplification and switching tasks. With a maximum power dissipation of 0.625W and a minimum DC current gain of 20,000, this product ensures superior efficiency and functionality. Trust Onsemi to deliver innovative solutions for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Suitable for general purpose amplification and switching applications.

Configuration: DARLINGTON

Offers high current gain and allows for smaller input current requirements.

Package Shape: ROUND

Enables easy mounting and installation in various electronic devices.

No. of Terminals: 3

Simplifies circuit connections and enhances ease of use.

Maximum Power Dissipation (Abs): 0.625 W

Efficiently handles power dissipation, ensuring reliable performance under load.

Maximum Collector-Emitter Voltage: 20 V

Allows for operation in low voltage applications.

Minimum DC Current Gain (hFE): 20000

Provides high current gain, making it suitable for high-power amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Transistor Element Material: SILICON

Offers reliability and stability in various operating conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA12RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

MPSA12RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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