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MPSA64RLRMG

Onsemi

MPSA64RLRMG by Onsemi

MPSA64RLRMG by Onsemi is a PNP Darlington BJT with 3 terminals, hFE of 20000, and max. power dissipation of 1.5W. Ideal for switching applications, it operates at up to 150 °C with VCE of 30V. The transistor's SILICON material and cylindrical package make it suitable for high-frequency operations up to 125MHz.

Median Price

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3

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1k+

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Chip Stock

USA . 26,000 parts In-Stock

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USA . 10,566 parts In-Stock

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AZTECH Wire

Italy . 771 parts In-Stock

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Component Stockers USA

USA . 688 parts In-Stock

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Kulean Microsystems

USA . 5,297 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 1,918 parts In-Stock

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Corphita

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UHIMA Technologies

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Overview

Discover the power of the MPSA64RLRMG from Onsemi, a high-quality small signal bipolar junction transistor designed for switching applications. With a maximum collector-emitter voltage of 30V and a peak reflow temperature of 260 °C, this PNP Darlington transistor offers reliability and performance like no other. Ideal for various electronic projects, this transistor boasts a minimum DC current gain of 20000 and a maximum operating temperature of 150°C. Get ready to experience seamless functionality and efficiency with the MPSA64RLRMG - your go-to choice for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, allowing for easy integration into existing designs.

Configuration: DARLINGTON

Offers high current gain and switching speed, making it ideal for switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, providing reliable and efficient performance.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

No. of Terminals: 3

Standard 3-terminal design for easy connection and compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 1.5 W

Can handle high power dissipation, making it suitable for applications that require high power handling capability.

Minimum DC Current Gain (hFE): 20000

High DC current gain ensures reliable and stable amplification in various circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for applications that require extended operating temperatures.

Maximum Collector-Emitter Voltage: 30 V

Supports high collector-emitter voltage, suitable for applications requiring higher voltage handling capability.

Maximum Collector Current (IC): 0.5 A

Can handle high collector current, suitable for applications that require high current carrying capacity.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability for the transistor.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and solderability for easy and reliable connections.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency allows for fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA64RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA64RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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