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MPS6724RLRAG

Onsemi

MPS6724RLRAG by Onsemi

MPS6724RLRAG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V max collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its 4000 min hFE. Package style is cylindrical with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,716 parts In-Stock

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Digiode

USA . 597 parts In-Stock

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AZTECH Wire

Italy . 44 parts In-Stock

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$9.760

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QUARKTWIN TECHNOLOGY LTD

USA . 8,342 parts In-Stock

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TANS Electronics

Latvia . 2,409 parts In-Stock

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Problanco Electronics

Mexico . 2,247 parts In-Stock

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Corphita

USA . 1,878 parts In-Stock

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Kulean Microsystems

USA . 1,341 parts In-Stock

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SupplyDigital Components

Austria . 1,239 parts In-Stock

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Corohmni

South Africa . 162 parts In-Stock

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UHIMA Technologies

Türkiye . 155 parts In-Stock

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Overview

Discover the power of the MPS6724RLRAG by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for superior performance in a wide range of applications. With its NPN polarity and Darlington configuration, this transistor offers unmatched reliability and efficiency. Its 1W maximum power dissipation and 4000 minimum DC current gain guarantee exceptional functionality, while its 40V maximum collector-emitter voltage ensures versatility. Trust Onsemi's reputation for excellence and unlock the potential of your projects with the MPS6724RLRAG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long-term reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, making this transistor versatile.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making this transistor suitable for high-power applications.

Maximum Power Dissipation (Abs): 1 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating allows the transistor to be used in a wide range of circuit applications.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency indicates that this transistor can operate at high frequencies, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6724RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6724RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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