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MPSA28RLRPG

Onsemi

MPSA28RLRPG by Onsemi

MPSA28RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 80V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Suitable for use in electronic circuits where precise switching and amplification are needed.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 38,000 parts In-Stock

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38,000

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Vyrian

USA . 5,098 parts In-Stock

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5,098

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Digiode

USA . 2,437 parts In-Stock

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2,437

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Distributors (Availability)

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AZTECH Wire

Italy . 990 parts In-Stock

1+ parts

$9.220

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990

$9.220

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Problanco Electronics

Mexico . 7,353 parts In-Stock

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7,353

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SupplyDigital Components

Austria . 7,236 parts In-Stock

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7,236

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TANS Electronics

Latvia . 3,777 parts In-Stock

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3,777

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Corphita

USA . 1,368 parts In-Stock

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1,368

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UHIMA Technologies

Türkiye . 970 parts In-Stock

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970

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Corohmni

South Africa . 251 parts In-Stock

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251

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Kulean Microsystems

USA . 180 parts In-Stock

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180

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Overview

Unleash the power of innovation with the MPSA28RLRPG Small Signal Bipolar Junction Transistor by Onsemi. Crafted with precision and expertise, this NPN Darlington transistor offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides customers with unmatched value and efficiency. Elevate your projects to new heights with the cutting-edge technology and superior quality that Onsemi is renowned for. Choose the MPSA28RLRPG and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for long-term use in various applications.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits, offering versatility in design and compatibility.

Configuration: DARLINGTON

Provides high current gain and increased sensitivity, making it ideal for applications requiring high amplification.

Package Shape: ROUND

Offers a compact and space-saving design, suitable for applications where board space is limited.

Terminal Form: THROUGH-HOLE

Facilitates easy manual assembly and soldering onto circuit boards, making it user-friendly for hobbyists and professionals alike.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in design, ensuring ease of use and installation.

Minimum DC Current Gain (hFE): 10000

Provides high amplification capability, allowing for efficient signal processing and transmission in various electronic circuits.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even in high-temperature environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

Allows for higher voltage handling capacity, increasing the range of applications where the transistor can be used.

Transistor Element Material: SILICON

Offers stable and consistent performance over a wide temperature range, making it reliable for various operating conditions.

Maximum Collector Current (IC): 0.5 A

Provides sufficient current handling capability for many small signal applications, ensuring reliable operation under load.

Terminal Finish: TIN SILVER COPPER

Ensures good electrical conductivity and solderability, enhancing the reliability and longevity of the transistor connections.

Terminal Position: BOTTOM

Facilitates easy mounting and connection to PCBs, simplifying the assembly process for circuit designers and manufacturers.

Peak Reflow Temperature °C: 260

Allows for easy and reliable solder reflow during manufacturing or rework processes, ensuring consistent and secure connections.

Nominal Transition Frequency (fT): 200 MHz

Enables high-speed signal processing and amplification, making it suitable for applications requiring fast response times and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA28RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA28RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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