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PZT651T1G

Onsemi

PZT651T1G by Onsemi

PZT651T1G by Onsemi is a NPN BJT with 60V VCEO, 2A IC, and 75MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.8W. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.

Median Price

$0.215

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 221,730 parts In-Stock

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$0.135

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Chip1Stop

Japan . 1,481 parts In-Stock

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$0.215

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Farnell

UK . 212 parts In-Stock

1+ parts

$0.687

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$0.351

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$0.221

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212

$0.687

$0.351

$0.221

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Mouser Electronics

USA . 11,696 parts In-Stock

1+ parts

$0.840

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$0.339

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$0.234

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11,696

$0.840

$0.339

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DigiKey

USA . 10,771 parts In-Stock

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$0.840

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$0.340

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$0.234

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$0.175

10,771

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$0.175

Verical

USA . 221,730 parts In-Stock

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$0.135

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Avnet

USA . 72,000 parts In-Stock

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Future Electronics

Canada . 20,000 parts In-Stock

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$0.240

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$0.230

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Master Electronics

USA . 5,000 parts In-Stock

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$0.214

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$0.170

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Newark

USA . 3,000 parts In-Stock

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$0.215

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$0.166

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Element14

Singapore . 2,212 parts In-Stock

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$0.471

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$0.384

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Rochester

USA . 600 parts In-Stock

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$0.215

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$0.178

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$0.159

600

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$0.178

$0.159

Distributors (In-Stock)

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Digiode

USA . 1,193 parts In-Stock

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$0.167

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Nova Conductors

Japan . 45 parts In-Stock

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45

$0.207

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Maritex

Poland . 7,617 parts In-Stock

1+ parts

$0.685

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$0.337

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$0.262

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7,617

$0.685

$0.337

$0.262

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TME

Poland . 998 parts In-Stock

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$0.770

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$0.311

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$0.228

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998

$0.770

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$0.228

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IBS Electronics

USA . 749,000 parts In-Stock

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$0.300

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$0.239

749,000

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$0.239

NAC Semi

USA . 274,000 parts In-Stock

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$0.440

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Chip Stock

USA . 95,000 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 44,138 parts In-Stock

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Flip Electronics

USA . 29,073 parts In-Stock

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Martec Srl

Italy . 13,000 parts In-Stock

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Bristol Electronics

USA . 3,538 parts In-Stock

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$0.268

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$0.132

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$0.107

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QIE Inc.

USA . 2,473 parts In-Stock

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Connector Distribution Corp

USA . 980 parts In-Stock

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Right Parts Inc.

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Semi Source

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882

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Microfarads

USA . 853 parts In-Stock

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ComSIT Distribution GmbH

Germany . 853 parts In-Stock

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SPM Sales

USA . 760 parts In-Stock

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Dan-Mar Components

USA . 300 parts In-Stock

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PC Components Company LLC

USA . 238 parts In-Stock

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Speed Components Ltd

Israel . 92 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 6 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 472 parts In-Stock

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$0.095

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Ampacity Inc.

Singapore . 50,820 parts In-Stock

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$0.142

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Corphita

USA . 1,798 parts In-Stock

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Component Stockers USA

USA . 170,461 parts In-Stock

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$0.140

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$0.150

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$0.130

Argo Parts USA

USA . 866 parts In-Stock

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$0.207

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$0.201

866

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Perfect Parts

USA . 99,990 parts In-Stock

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Kepictronics

USA . 65,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 13,523 parts In-Stock

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Lixinc

USA . 9,887 parts In-Stock

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TANS Electronics

Latvia . 5,882 parts In-Stock

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Problanco Electronics

Mexico . 4,948 parts In-Stock

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SupplyDigital Components

Austria . 4,751 parts In-Stock

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Kulean Microsystems

USA . 3,378 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.203

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 250 parts In-Stock

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Continental Prestige Electronics

USA . 103 parts In-Stock

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$0.265

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Overview

Enhance your electronic projects with the PZT651T1G Small Signal Bipolar Junction Transistor by Onsemi. Known for its high-quality components, Onsemi delivers reliable and efficient products that meet industry standards. This NPN transistor is perfect for a variety of applications, offering superior performance and durability. Trust Onsemi to provide you with the best in transistor technology, giving you the value and benefits you need to succeed in your projects. Choose the PZT651T1G for your next design and experience the difference Onsemi can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures good durability and reliability, making this product suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in its application.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into circuits.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation of the transistor onto PCBs, saving space and facilitating mass production.

Maximum Power Dissipation (Abs): 0.8 W

With a high maximum power dissipation of 0.8W, this transistor can handle higher power levels without being damaged, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V allows for the transistor to be used in a wide range of applications without the risk of breakdown.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor is capable of handling high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 75 MHz

The high nominal transition frequency of 75MHz indicates that this transistor is capable of operating at high frequencies, making it ideal for amplification in RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT651T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT651T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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