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PZT651T3G

Onsemi

PZT651T3G by Onsemi

PZT651T3G by Onsemi is a NPN BJT with VCEsat of 0.5V, hFE of 40, and IC of 2A. Ideal for small signal applications in electronics due to its high transition frequency of 75MHz and max operating temperature of 150 °C. This transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,108 parts In-Stock

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Digiode

USA . 1,713 parts In-Stock

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1,713

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Problanco Electronics

Mexico . 3,970 parts In-Stock

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3,970

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SupplyDigital Components

Austria . 3,686 parts In-Stock

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TANS Electronics

Latvia . 2,233 parts In-Stock

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Corphita

USA . 1,590 parts In-Stock

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Kulean Microsystems

USA . 906 parts In-Stock

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UHIMA Technologies

Türkiye . 647 parts In-Stock

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Corohmni

South Africa . 389 parts In-Stock

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Overview

Elevate your electronic designs with the PZT651T3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by Onsemi, this NPN transistor is perfect for a wide range of applications, from amplifiers to switching circuits. With a maximum VCEsat of 0.5V and a minimum DC Current Gain of 40, this transistor provides exceptional value and benefits to customers looking for a dependable and efficient solution. Upgrade your projects today with the PZT651T3G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good electrical and thermal insulation, making the transistor reliable in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for a range of electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Surface Mount: YES

Being surface mountable enables easy and automated assembly onto circuit boards, saving time and cost in production.

Maximum VCEsat: 0.5 V

The low VCEsat helps in minimizing power loss and improving efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on the circuit board.

Terminal Form: GULL WING

The gull wing terminals provide strong mechanical connection and are suitable for automated soldering processes.

No. of Terminals: 4

With 4 terminals, the transistor can be easily connected in a circuit for various applications.

Maximum Power Dissipation (Abs): 0.8 W

The high maximum power dissipation allows the transistor to handle larger loads without getting damaged.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable and consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage allows the transistor to handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 2 A

The high maximum collector current allows the transistor to handle larger current loads in the circuit.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and easy integration into circuit designs.

Case Connection: COLLECTOR

The collector case connection simplifies the circuit layout and provides efficient current flow.

Nominal Transition Frequency (fT): 75 MHz

A high nominal transition frequency of 75 MHz indicates that the transistor can operate at high frequencies, making it suitable for various RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT651T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

PZT651T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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