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PZT651T1

Onsemi

PZT651T1 by Onsemi

PZT651T1 by Onsemi is a NPN BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.8W. Features Gull Wing terminals and operates up to 150 °C, making it suitable for surface mount designs.

Median Price

$0.146

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Freelance Electronics

USA . 960 parts In-Stock

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Vyrian

USA . 2,212 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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Microfarads

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Standard Data Resources

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908

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Semi Source

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R&J Components

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Elcom Components

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Prism Electronics

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Digiode

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QIE Inc.

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Resion

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Corohmni

South Africa . 123 parts In-Stock

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SupplyDigital Components

Austria . 6,295 parts In-Stock

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TANS Electronics

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Corphita

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Kepictronics

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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Overview

Get ready to elevate your electronic designs with the PZT651T1 by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers a cutting-edge Small Signal Bipolar Junction Transistor that is guaranteed to exceed your expectations. Whether you're working on audio amplifiers, signal processing circuits, or voltage regulators, this NPN transistor offers unparalleled performance and versatility. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 75MHz, the PZT651T1 is sure to impress. Say goodbye to subpar components and hello to superior functionality with Onsemi's PZT651T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low cost.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic devices.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and enabling automated assembly processes.

Terminal Form: GULL WING

Gull wing terminals provide a secure connection and make soldering easier during assembly, ensuring reliable performance.

Maximum Power Dissipation (Abs): 0.8 W

With a high power dissipation rating of 0.8W, this transistor can handle heat dissipation efficiently, preventing overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures stable and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

A high collector-emitter voltage rating of 60V provides protection against voltage spikes and ensures safe operation in circuits.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high performance, low noise, and reliability in electronic devices.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle high power applications efficiently and reliably.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and ensures a reliable electrical connection for enhanced performance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and make it easier to connect the transistor in various configurations.

Case Connection: COLLECTOR

The collector case connection simplifies circuit layout and ensures proper heat dissipation for optimal performance.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 75 MHz

A high nominal transition frequency of 75MHz enables fast switching and amplification in high-frequency circuits, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT651T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT651T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-596-9376, 5961015969376

NIIN

015969376

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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