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PZT651T3

Onsemi

PZT651T3 by Onsemi

PZT651T3 by Onsemi is a NPN BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. It comes in a small outline package ideal for surface mount applications. With hFE of 40 and max temp of 150 °C, it's suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,815 parts In-Stock

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Vyrian

USA . 704 parts In-Stock

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SupplyDigital Components

Austria . 5,751 parts In-Stock

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Problanco Electronics

Mexico . 4,596 parts In-Stock

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Corphita

USA . 2,460 parts In-Stock

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Kulean Microsystems

USA . 2,353 parts In-Stock

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TANS Electronics

Latvia . 1,335 parts In-Stock

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UHIMA Technologies

Türkiye . 806 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Overview

Enhance your electronic projects with the PZT651T3 by Onsemi, a high-quality small signal bipolar junction transistor that offers reliability and performance. Manufactured by Onsemi, a trusted name in semiconductors, this NPN transistor is ideal for a variety of applications. With its compact design, GULL WING terminals, and maximum power dissipation of 0.8W, the PZT651T3 delivers exceptional value and efficiency. Whether you're designing amplifiers, oscillators, or switching circuits, this transistor provides the performance and durability you need. Upgrade your projects today with the PZT651T3 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile and widely applicable.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Power Dissipation (Abs): 0.8 W

With a high power dissipation capability, this transistor can handle relatively high power levels without overheating.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating provides flexibility in circuit design and allows for use in a wide range of applications.

Maximum Collector Current (IC): 2 A

With a high collector current rating, this transistor can handle substantial current flow, making it suitable for power applications.

Nominal Transition Frequency (fT): 75 MHz

The high transition frequency allows for fast switching speeds and high-frequency performance, making this transistor ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT651T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT651T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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