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2STN1550

STMicroelectronics

2STN1550 by STMicroelectronics

2STN1550 by STMicroelectronics is a NPN BJT transistor with 5A IC, 50V VCE, and 1.6W power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150°C, making it suitable for various electronic devices.

Median Price

$0.318

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 430 parts In-Stock

1+ parts

$0.207

100+ parts

$0.197

1k+ parts

$0.194

10k+ parts

-

430

$0.207

$0.197

$0.194

-

DigiKey

USA . 4,092 parts In-Stock

1+ parts

$0.880

100+ parts

$0.355

1k+ parts

$0.241

10k+ parts

$0.180

4,092

$0.880

$0.355

$0.241

$0.180

Mouser Electronics

USA . 639 parts In-Stock

1+ parts

$0.880

100+ parts

$0.356

1k+ parts

$0.241

10k+ parts

$0.185

639

$0.880

$0.356

$0.241

$0.185

Avnet

USA . 215,000 parts In-Stock

1+ parts

-

100+ parts

-

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215,000

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-

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EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

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6,000

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RS (Exports)

UK . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.429

1k+ parts

$0.361

10k+ parts

$0.345

1,000

-

$0.429

$0.361

$0.345

Chip1Stop

Japan . 530 parts In-Stock

1+ parts

-

100+ parts

$0.208

1k+ parts

-

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530

-

$0.208

-

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Verical

USA . 430 parts In-Stock

1+ parts

-

100+ parts

$0.197

1k+ parts

$0.194

10k+ parts

-

430

-

$0.197

$0.194

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 39 parts In-Stock

1+ parts

$0.256

100+ parts

-

1k+ parts

-

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39

$0.256

-

-

-

Digiode

USA . 3,370 parts In-Stock

1+ parts

$0.270

100+ parts

-

1k+ parts

-

10k+ parts

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3,370

$0.270

-

-

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TME

Poland . 733 parts In-Stock

1+ parts

$0.670

100+ parts

$0.314

1k+ parts

$0.284

10k+ parts

-

733

$0.670

$0.314

$0.284

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Vyrian

USA . 25,829 parts In-Stock

1+ parts

-

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25,829

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VNN

France . 2,593 parts In-Stock

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2,593

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Anansix

USA . 2,079 parts In-Stock

1+ parts

-

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2,079

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-

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IBS Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.271

10k+ parts

$0.196

1,000

-

-

$0.271

$0.196

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 25,560 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

10k+ parts

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25,560

$0.174

-

-

-

Corphita

USA . 1,565 parts In-Stock

1+ parts

$0.256

100+ parts

-

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-

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1,565

$0.256

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$0.256

100+ parts

-

1k+ parts

-

10k+ parts

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50

$0.256

-

-

-

IDEA Electronic Components Group

UK . 2,056 parts In-Stock

1+ parts

$0.420

100+ parts

-

1k+ parts

$0.378

10k+ parts

-

2,056

$0.420

-

$0.378

-

Continental Prestige Electronics

USA . 49 parts In-Stock

1+ parts

$0.656

100+ parts

$0.368

1k+ parts

$0.284

10k+ parts

$0.266

49

$0.656

$0.368

$0.284

$0.266

MKK Technologies

India . 629 parts In-Stock

1+ parts

$0.789

100+ parts

-

1k+ parts

-

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629

$0.789

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DigiPath Technology Company

USA . 629 parts In-Stock

1+ parts

$0.789

100+ parts

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629

$0.789

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RC Electronics

USA . 73,576 parts In-Stock

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73,576

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Kepictronics

USA . 27,663 parts In-Stock

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27,663

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Perfect Parts

USA . 26,832 parts In-Stock

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26,832

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Lixinc

USA . 18,641 parts In-Stock

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18,641

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A-Z Elektronik GmbH

Germany . 9,175 parts In-Stock

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9,175

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Alle Elektronik GmbH

Germany . 4,391 parts In-Stock

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4,391

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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4,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 945 parts In-Stock

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945

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Parana Technologies

USA . 873 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

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873

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$0.502

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Overview

Enhance your power management solutions with the 2STN1550 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors for various applications such as switching. With excellent performance and durability, this NPN transistor offers a maximum collector-emitter voltage of 50V and a maximum collector current of 5A. Its small outline package and gull wing terminals make it easy to integrate into your designs. Trust STMicroelectronics to provide reliable components that meet your needs and exceed your expectations. Experience the difference with the 2STN1550.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this transistor lightweight and durable, ideal for space-constrained applications.

Polarity or Channel Type: NPN

The NPN channel type ensures easy integration with other NPN devices, allowing for a more efficient and effective circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the complexity of the overall system, making it easier to troubleshoot and maintain.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast switching speeds and high performance, making it suitable for applications requiring rapid on/off transitions.

Surface Mount: YES

The surface mount capability of this transistor allows for easy and secure mounting on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact form factor, making it suitable for designs where space is limited.

Terminal Form: GULL WING

The gull wing terminal form offers reliable connectivity and easy soldering, ensuring a strong and stable electrical connection.

No. of Terminals: 4

The 4 terminals provide versatile connectivity options, allowing for flexibility in circuit design and integration.

Maximum Power Dissipation (Abs): 1.6 W

With a high maximum power dissipation of 1.6W, this transistor can handle high-power applications without overheating or failing.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits, making it suitable for applications where size constraints are a concern.

Minimum DC Current Gain (hFE): 90

The minimum DC current gain of 90 ensures reliable amplification and signal processing, making this transistor a dependable choice.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage of 50V provides adequate headroom for voltage spikes and fluctuations, ensuring stable and reliable operation.

Transistor Element Material: SILICON

The use of silicon in the transistor element material offers high performance, reliability, and durability, making it a dependable choice for demanding applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads, making it suitable for power-hungry applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish on the terminals provides excellent corrosion resistance and solderability, ensuring long-term reliability and stable electrical connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and integration, making it easier to design and implement complex circuits.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies circuit design and ensures proper heat dissipation, enhancing the overall performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is easy to integrate into automated assembly processes, saving time and reducing production costs.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable soldering and strong mechanical connections, making this transistor ideal for high-temperature processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STN1550 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STN1550 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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