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STW13009

STMicroelectronics

STW13009 by STMicroelectronics

STW13009 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 12A, and max. power dissipation of 125W. Ideal for switching applications due to its single configuration and silicon element material in a rectangular package shape with through-hole terminals.

Median Price

$0.726

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 52 parts In-Stock

1+ parts

$0.726

100+ parts

-

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52

$0.726

-

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Vyrian

USA . 7,484 parts In-Stock

1+ parts

-

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7,484

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Digiode

USA . 2,280 parts In-Stock

1+ parts

-

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2,280

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-

-

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Anansix

USA . 2,077 parts In-Stock

1+ parts

-

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2,077

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-

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Cyclops Electronics Ltd

UK . 60 parts In-Stock

1+ parts

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60

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.711

100+ parts

-

1k+ parts

$0.683

10k+ parts

-

50

$0.711

-

$0.683

-

Argo Parts USA

USA . 4,155 parts In-Stock

1+ parts

$0.726

100+ parts

-

1k+ parts

-

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4,155

$0.726

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-

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Continental Prestige Electronics

USA . 285 parts In-Stock

1+ parts

$0.726

100+ parts

-

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-

10k+ parts

$0.711

285

$0.726

-

-

$0.711

IDEA Electronic Components Group

UK . 1,248 parts In-Stock

1+ parts

$0.822

100+ parts

-

1k+ parts

$0.739

10k+ parts

-

1,248

$0.822

-

$0.739

-

MKK Technologies

India . 992 parts In-Stock

1+ parts

$1.545

100+ parts

-

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992

$1.545

-

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DigiPath Technology Company

USA . 992 parts In-Stock

1+ parts

$1.545

100+ parts

-

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992

$1.545

-

-

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AZTECH Wire

Italy . 639 parts In-Stock

1+ parts

$10.614

100+ parts

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639

$10.614

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Ampacity Inc.

Singapore . 741 parts In-Stock

1+ parts

$58.050

100+ parts

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741

$58.050

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Authorized Procurement Solutions

USA . 32,400 parts In-Stock

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32,400

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Perfect Parts

USA . 12,443 parts In-Stock

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12,443

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Corphita

USA . 4,762 parts In-Stock

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4,762

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Parana Technologies

USA . 1,798 parts In-Stock

1+ parts

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100+ parts

$0.982

1k+ parts

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1,798

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$0.982

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GreenTree Electronics

Israel . 460 parts In-Stock

1+ parts

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460

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Overview

Unleash the power of innovation with the STW13009 by STMicroelectronics, a top-of-the-line Power Bipolar Junction Transistor designed for high-performance switching applications. With a maximum collector-emitter voltage of 400V and a maximum operating temperature of 150°C, this NPN transistor offers unparalleled reliability and efficiency. Trust in STMicroelectronics' reputation for quality and precision engineering, and experience the seamless integration and superior performance that the STW13009 brings to your projects. Upgrade your designs today with the STW13009 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Package Shape: RECTANGULAR

Rectangular package shape provides ease of handling and mounting, simplifying the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easier to solder and provide a more secure connection, improving the reliability of the product.

Maximum Power Dissipation (Abs): 125 W

High maximum power dissipation allows the transistor to handle high power levels without overheating, increasing its reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting on a variety of surfaces, enhancing the versatility of the product.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures stable and consistent performance in amplification circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows the transistor to operate reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage rating of 400 V enables the transistor to handle high voltages safely, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance and reliability, ensuring long-term stability in electronic circuits.

Maximum Collector Current (IC): 12 A

High maximum collector current rating of 12 A allows the transistor to handle high current loads, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and improves overall reliability of the product.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STW13009 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STW13009 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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